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MG300Q1US11
INSULATED GATE BIPOLAR TRANSISTOR
TOSHIBA
INSULATED GATE BIPOLAR TRANSISTOR
MG300tM US11
GTR Module
Silicon N Channel IGBT
High Power Switching Applications
Motor Control Applications
Features
q High input impedance
. High speed: tf = 1.0ps (Max.) trr = 0.5ps (Max.)
. Low saturation voltage: VCE (sat) = 2.7V (Max.)
0 Enhancement mode
q The electrodes are isolated from case
Maximum Ratings (Ta = 25°C)
CHARACTERISTICS SYMBOL RATING UNIT
Collector-Emitter Voltage VCES 1200 V
Gate-Emitter Voltage Vars * 20 V
DC Ic 300
Collector Current A
1ms ICP 600
DC ls 300
Forward Current A
1ms IFM 600
Collector Power
Dissipation (T c = 25''C) PC 2000 W
Junction Temperature T, 150 "C
Storage Temperature Range Tstg -40 - 125 (
. 2500
Isolation Voltage Vlsol (AC 1 Minute) V
Screw Torque
(Terminal: M4/M6/Mounting) - 2/3/3 N y m
Equivalent Circuit (MGSOOCH U811)
Cl “1097250 0022105 i?T8 D
TOSHIBA conponA'noN PW03960796 1/5
MG30001 US11
Unit in mm
39t0.5 3 0.5 5410.8
to. 24t0.5 tft.
I"'" :0
Ut l .
106t0.8 l 6010.8 [
JEDEC -
EIAJ -
TOSHIBA 2-109A4A
Weight t 465g
Electrical Characteristics (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current 'GES VGE = i 20V, VCE = 0 - - i 500 nA
Collector Cut-off Current Ices VCE = 1200V, VGE = o - - 4 mA
Gate-Emitter Cut-off Voltage Vars (OFF) IC = 300mA, VCE = 5V 3.0 - 6.0 V
Collector-Emitter Saturation Voltage VCE (sat) Ic = 300A, VGE = 15V - 2.2 2.7 V
Input Capacitance Cies VCE = lov, VGE = o, f = 1MHz - 42000 - pF
Rise Time tr - 0.3 0.6
Switching Turn-on Time ton 15V 2.7t1 d - 0.4 0.8
Time Fall Time t, 0 I, esta')'-'-, m - 0.6 1.0 H3
Turn-off Time to" -15v 600Y - 1.2 1.8
Forward Voltage VF IF = 300A, VGE = o - 2.0 3.0 v
Reverse Recovery Time trr 'ti-il-ttutr" -10V - 0.25 0.5 us
Thermal Resistance Hm (I . c) Transistor - - 0.062 "c/w
Diode - - 0.2
2/5 PW03960796
D “IEHTESU Cll3iili?hClia 13q D
TOSHIBA CORPORATION
MGSOOQ1 US11
IC - VCE VCE - VGE
COMMON EMITTER
Tc = 25t;
COMMON
F,M1TTRR
Te = -40t
IC (10
COLLECTOR CURRENT
VGE=8V
COLLECTOR—EMITTER VOLTAGE vCE (v)
0 2 4 6 8 10 0 4 8 12 16 20
COLLECTOR“EMITTER VOLTAGE VCE (V) CATE-EMITTER VOLTAGE VGE (V)
VCE - VGE VCE - VGE
COMMON
EMITTER
Tc = MT
COMMON
EMI TTER
Tc = 125t:
IC=600A
COLLECTOE-EMITTER VOLTAGE VCE (v)
COLLECTOR—EMITTER VOLTAGE veg (v)
0 4 a 12 16 20 o 4 8 12 16 20
GATE-EMITTBR VOLTAGE VGE (v) GATE-EMITTER VOLTAGE v03 (v)
1c - VGE A VCE, VGE - QG
A 640 COMMON EMITTBR 'd 800 COMMON BMITTER v
< " tr
' VCE=5V t RL=ZQ g
o 4_. n: . tm
- . Si! Tc = 25 c
t." 480 . ta" 600 E
a O "
m - 0 S
ttt gf 0
g f, 5 49% tm
U 320 " E 400 trt
g a, fd - E
8 5’ 35 te
25 a: 2
I' 160 sf 0 o 200 600 ,
o f -4 t; 400 E
u tu, M
0 S 200 o o
0 4 s 12 16 u 00 400 800 1200 1600 2000
GATiFB.UITTER VOLTAGE VGE (v) CHARGE 2o (nc)
D 3097350 0023110? 070 D
TOSHIBA CORPORATION PWO3960796 3/5
MG300tMUS11
SWITCHING TIME - Ro SWITCHING TIME - 1c
COMMON EMITTER COMMON EMITTER
A VCE=60°V A VCE=6OOV' Rty=2.7t1
I' 1ty=300A l v65=115v. Tc=25'C
v VGE=i15V v 2
m Tc---25t m
F.':' E 1
E [i' 05
- 2 0.3
3 ie ton
0.3 od, nssfsnncam ((23;J loo o. 40 80 120 160 200 240 280 320
' RG COLLECTOR CURRENT 1c LA)
Ip - VF N.
5 t trr, Irr - "
A COMMON CATHODE -3
< . t')4
v VGE=0V Hv
Jt A, E "
o u: .7
g tg 't
g m 'f COMMON CATHODE
g m 8 di/dt--=300A/'as
ii.l 'ti vtHy-=-10V
o 0.5 LO 1.5 2.0 2.5 3.0 g a Tc=25'C
FORWARD VOLTAGE v (v
F ) " o 40 80 120 160 200 240 280 320
3 ?,i FORWARD CURRENT " (A)
C - VCE
Rth(t) - tw
't P3 1
U P, 0.
Egg 02 moms STAGE
o >3 N
5 Jie 0.1
2 COMMON M A
0 EMITTER E c 0.05
t . - f 0.03 TRANSISTOR STAGE
g 1ragrse 0V it.. c:
c== 'C Z
Fm 0.003
O3 0.1 0.3 l 3 10 30 100 10-3 ttra IO-l 1 10
COLLECTOR-EMITTBR VOLTAGE VCE (v) PULSE WIDTH tw (s)
I: 90972.50 00221.08 TO'? III
4/5 PW03960796 TOSHIBA CORPORATION
MG300tMUS11
SAFE OPERATING AREA REVERSE BIAS SOA
l SINGLE NONREPETITIVE PULSE
Ter=25t;
CURVES MUST BE DERATED LINEARLY
V WITH INCREASE IN TEMPERATURE. v
H 1000 IC MAX.(PULSED) n H
tit 500 -
300 z 00 iii
a w, v, g
8 lc MAX. ' a
m IN (comx- g
g 50 NUOUS) o f:';
a 30 t, 'ti
' l, 'if, Tis12rc
lo t, vGE=115v
' HG: 2.70.
1 3 10 30 100 300 1000 3000 .0 200 400 600 800 1000 1200 1400
COLLECTOR‘EMITTER VOLTAGE VCE (V) COLLECTOR-RMIT) VOLTAGE VCE (V)
The information contained here is subject to change without notice.
The information contained herein is presented onty as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements tf patents or other rights of the thrd
parties which may result horn its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA Dr others. These TOSHIBA products are intended far usage in gen-
eral electionic equipments (a8ice equipment, communication equipment, measurhg equipment. domestic eieclrification.etc.) Please make sure that you consuh with us before you use these TOSHIBA
products in equipments which require high quality and/or reliability. and in equipments which could have major impact lo the welfare of human lite (atomic energy control. spaceship, trattig signal,
combustion control, all types of safety devices, etc) TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments
without riorconsultationwi OS IBA.
p tat W H CCI 9097250 unaamq ma ICCI
TOSHIBA CORPORATION Pw03960796 5/5
www.ic-phoenix.com
.
