MG25Q6ES51 ,N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)APPLICATIONS71 * 0.8 or16.0 d: 0.5 60.96 d: 0.5 0’9_ lla |1:94..nr. _ .b' .b.6,a+n,5.-F.iiFiLir1i1_ ..
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MG25Q6ES51
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
TOSHIBA MG25Q6ES51
TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
MG25Q6ES51l
HIGH POWER SWITCHING APPLICATIONS Unit in mm
MOTOR CONTROL APPLICATIONS
71 l 0.8 o.
16.0 A 0.5 ' 60.96 1 0.5 0’9
_ #41524 & ths . J' 6.8 S: 0.5 A-
o The Electrodes are Isolated from Case. In a - ll a -- V" W” l '
m ' In -r IQ
o High Input Impedance. 333?; -ii) - - fl
o G.P.%' - oi
o 6 IGBTs Built Into 1 Packa e. 3 17 N N a "
g u .. I TEE .... 19min l?
3 ill t fl 5 I _
l ‘L 11.43 A 0.5
16.0 1 0.5 57.15t 0.5
I 93.0 1 0.5
107.2 t 0.8
1.15103“ .0:O.3
'r-ri,, 't MMMMMM. J,
S 3 g 105.0'105 , g
g g 41 g
a' g' g ts'
EQUIVALENT CIRCUIT
OP+ JEDEC -
EIAJ -
Weight : 185g
20 0 U
60 0 V
10 tr--t7W
so-t 'ro-st 11 o-t
40 80 120
961001EAA1
OTOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid
situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or
damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operatin ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions
and con itions set forth in the TOSHIBA Semiconductor Reliability Handbook.
OThe information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third
parties which may result from its use. No license is granted by implication or otherwise under any intellectual
property or other rights of TOSHIBA CORPORATION or others.
OThe information contained herein is subject to change without notice.
1999-03-04 1/7
TOSHIBA MG25Q6ES51
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Emitter Voltage VCES 1200 V
Gate-Emitter Voltage VGES :20 V
DC 35/ 25
25°C/ 80°C
Collector Current ( ICP ) A
ms (25°C/80°C) 70/ 50
DC IF 25
Forward Current 1 ms IFM 50 A
Collector Power Dissipation (Tc = 25°C) PC 200 W
Junction Temperature Tj 150 T
Storage Temperature Range Tstg -40--125 T
Isolation Voltage V1501 2500 (AC 1 minute) V
Screw Torque - 6 Nun
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGES VGE = i20 V, VCE = 0 - - i500 nA
Collector Cut-off Current ICES VCE = 1200 V, VGE = 0 - - 0.5 mA
Gate-Emitter Cut-off Voltage VGE (off) IC = 25 mA, VCE = 5 V - 6.0 - V
Collector-Emitter Saturation V 10 = 25 A, Tj = 25°C - 2.8 3.2 V
Voltage CE (sat) VGE = 15 V Tj = 125°C - 3.1 3.7
. VCE=10V,VGE=0,
Input Capacitance Cies f g 1 MHz G - 2600 - pF
Rise Time tr VCC = 600V - 0.07 0.15
Switching Turn-on Time ton IC = 25A, VGE = i15V - 0.15 0.30
Time Fall Time tf RG = 51 n, Tj = 125°C - 0.07 0.10 #S
Turn-off Time toff (Note 1) - 0.60 0.90
Forward Voltage VF IF = 25 A, VGE = 0 - 2.0 2.8 V
. IF=25A,VGE---10V,
Reverse Recovery Time trr di/dt = 400A//s - 0.10 0.25 gs
. Transistor Stage - - 0.6 o
Thermal Resistance Rth (j-e) Diode Stage - - 1.0 C/W
1999-03-04 2/7
TOSHIBA MG25Q6ES51
(Note 1) Switching Time Test Circuit & Timing Chart
1999-03-04 3/7
TOSHIBA MG25Q6ES51
Ic - VCE Ic - VCE
20 V 14 V
C OMM ON COMMON
li EMITTER g EMITTERC 16 V
_ 0 Tc = 125°
S? Tc - 25 C S?
ti 20 V E
Stat 6V :5
ttt ted
VCE = 8 V
0 2 4 6 8 10 0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE - VGE VCE - VGE
COMMON
EMITTER
Te = 25°C
COMMON
EMITTER
Tc = 125°C
COLLECTOR—EMITTER VOLTAGE VCE
COLLECTOR-EMITTER VOLTAGE VCE (V)
O 4 8 12 16 20 0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V) GATE-EMITTER VOLTAGE VGE (V)
VCE - VGE IC - VGE
COMMON
EMITTER
Tc = -400C
COMMON EMITTER
VCE = 5 v
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT 10 (A)
0 4 8 12 16 20 0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V) GATE-EMITTER VOLTAGE VGE (V)
1999-03-04 4/7
TOSHIBA
SWITCHING TIME (/15)
SWITCHING LOSS (mJ)
SWITCHING TIME - 1C
COMMON EMITTER
VCC = 600 V
VGE = i 15 V
RG = 51 Q
- .. Tc = 25°C
--- :Tc=125°C
10 100
COLLECTOR-CURRENT 10 (A)
SWITCHING LOSS - IC
COMMON EMITTER
VCC = 600 V
VGE = i 15 V
RG = 51 Q
- : Te = 25°C
--- :Tc=125°C
10 100
COLLECTOR-CURRENT 10 (A)
SWITCHING TIME (/15)
SWITCHING LOSS (mJ)
MG25Q6ES51
SWITCHING TIME - RG
COMMON EMITTER
VCC = 600 V
VGE = i 15 V
IC = 25 A
- .. Tc = 25°C
--- :Tc=125°C
10 100 1000
GATE RESISTANCE RG (Q)
SWITCHING LOSS - RG
COMMON EMITTER
Vcc = 600 V
VGE = i 15 V
10 = 25 A
- : Te = 25°C
--- :Tc=l25°C
'10 100 1000
GATE RESISTANCE RG (Q)
1999-03-04 5/7
TOSHIBA MG25Q6ES51
C - VCE VCE, VGE - QG
5000 g;
Pp 1000 8, 600 tr
8 ' .1
a M 400 S
5 COMMON EMITTER E m
g 100 VGE = 0 V E E
g f-- 1 MHz g 200 ii
Tc = 25''C t; ,
30 M <
1 10 100 1000 d U
C0LLECT0R-EMITTER VOLTAGE VCE (V) o o 40 80 120 160
CHARGE QG (nC)
IF - VF a tin, Irr, Edsw - IF
In A E g
- gm 1
e V g t
E t D "U
r: -. 0 M
=5 m iiiie
o - s: o
D E t A
at > o y-, 0.1
< M M ttt .
3 ie. c: E
g 8 H 8 COMMON CATHODE
v, COMMON CATHODE a g m Vcc = 600 v o
VGE=0V z>a= VGE=-10V Tc--25t
'iirril dija--t00A/rrs-Tc=1
0 1 2 3 4 5 y g , 0'010 10 20 30
FORWARD VOLTAGE VF (V) a: n. at FORWARD CURRENT IF (A)
SHORT CIRCUIT SOA
Rth (t) - tw
Tc = 25°C
DIODE STAGE 100
TRANSISTER STAGE
0.1 10
V00 = 900 V
tw = 10 [us
VGE = i15V
Tj = 125°C
TRANSIENT THERMAL RESISTANCE
Rth(t) (°C/W)
COLLECTOR CURRENT 1C (A)
0.001 0.01 0.1 1 10 0 200 400 600 800 1000 1200 1400
PULSE WIDTH tw (s) C0LLECT0RaMITTER VOLTAGE VCE (V)
1999-03-04 6/7
TOSHIBA
COLLECTOR CURRENT 10 (A)
REVERSE BIAS SOA
Tj s 125°C
VGE = i15V
RG = 51 n
0 200 400 600 800 1000 1200 1400
COLLECTOR-EMITTER VOLTAGE VCE (V)
MG25Q6ES51
1999-03-04 7/7
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