MG25Q6ES50 ,N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)APPLICATIONS71 * 0.8 or16.0 d: 0.5 60.96 d: 0.5 0’9_ lla |1:94..nr. _ .b' .b.6,a+n,5.- tb-u-trua-W/ ..
MG25Q6ES50A ,N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)APPLICATIONS71+0.860'96+0;5,16.0 1 0.5w,1b.Z4iU.bO The Electrodes are Isolated from Case. comm "ll- ..
MG25Q6ES51 ,N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)APPLICATIONS71 * 0.8 or16.0 d: 0.5 60.96 d: 0.5 0’9_ lla |1:94..nr. _ .b' .b.6,a+n,5.-F.iiFiLir1i1_ ..
MG300J1US51 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications The electrodes are isolated from case. High input impedance Includes a comple ..
MG300J2YS50 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications The electrodes are isolated from case. High input impedance Includes a complet ..
MG300Q1US11 ,INSULATED GATE BIPOLAR TRANSISTORFeatures. High input impedance. High speed: tf = 1.0ps (Max.) trr = 0.5ps (Max.). Low saturation vo ..
MIC68200-1.2YML , 2A Sequencing LDO with Tracking and Ramp Control
MIC68200-1.2YML , 2A Sequencing LDO with Tracking and Ramp Control
MIC68200-1.5YML , 2A Sequencing LDO with Tracking and Ramp Control
MIC68200-1.8YML , 2A Sequencing LDO with Tracking and Ramp Control
MIC68200-1.8YML , 2A Sequencing LDO with Tracking and Ramp Control
MIC68200-2.5YML , 2A Sequencing LDO with Tracking and Ramp Control
MG25Q6ES50
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
TOSHIBA MG25Q6ES50
TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
MG25Q6ES50
HIGH POWER SWITCHING APPLICATIONS Unit in mm
MOTOR CONTROL APPLICATIONS b
71 l 0.8 W'
16.0:05. 52592410655 st'')',; ea o.s
. t . 0. . S: . A-
m _'' L'IJ“ v"v'v"P+' "5 sf?, at
o The Electrodes are Isolated from Case. 9 m! 4 J,',' tt N» Itt.
. 3320- Q - - 07 ik. f,
o High Input Impedance. Eagé‘ Lg Lg oi
3% . , ci "
0 6 IGBTs Built Into 1 Package. h. - l, 3.3% 39.31.91 l? . _ J.
381105 I : 15.5:2.-().§l A-
16.0 t 0.5 57.15t 0.5
l 93.0105
1.15103“ .0:O.3
, 't MMWMM .31. J,
3 g g 105.0;05 , g
g. t. g g.
EQUIVALENT CIRCUIT a 9 N t
OP-F JEDEC -
EIAJ -
Io-t 5o-st so-t TOSHIBA 2-108E1A
Weight : 185g
20 0 U
6 o O V
10 o--4D W
'so-t 7t:r-sl( 11 cy-st
4o-. 8ty-. 12 o-.
961001EAA1
OTOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid
situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or
damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operatin ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions
and con itions set forth in the TOSHIBA Semiconductor Reliability Handbook.
OThe information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third
parties which may result from its use. No license is granted by implication or otherwise under any intellectual
property or other rights of TOSHIBA CORPORATION or others.
OThe information contained herein is subject to change without notice.
1998-06-10 1/7
TOSHIBA MG25Q6ES50
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Emitter Voltage VCES 1200 V
Gate-Emitter Voltage VGES -k20 V
DC 35/25 A
2 CF /8 C)
Collector Current ( 51:1) 0 C)
lms (25°C/80°C) 70/50 A
DC IF 25 A
Forward Current lms IFM 50 A
Collector Power Dissipation
(Tc=25°C) PC 200 W
Junction Temperature Tj 150 °C
Storage Temperature Range Tstg -40--125 "C
. 2500
Isolation Voltage V1301 (AC 1 minute) V
Screw Torque - 6 Nun
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGES VGE= i20V, VCE=0 - - i500 nA
Collector Cut-Off Current ICES VCE=1200V, VGE=0 - - 0.5 mA
Gate-Emitter Cut-Off Voltage VGE (off) 10:25mA, VCE=5V 3.0 - 6.0 V
Collector-Emitter Saturation V 10 =25A, Tj =25°C - 2.8 3.2
Voltage CE (sat) VGE=15V Tj=125°C - 3.1 3.7
Input Capacitance Cies VCE = 10V, VGE = 0, f = 1MHz - 2600 - pF
Rise Time tr VCC=600V - 0.07 0.15
Switching Turn-On Time ton IC =25A, VGE= -f_- 15V - 0.15 0.30
Time Fall Time tf Rg=510, Tj=125°C - 0.07 0.10 ps
Turn-Off Time toff (Note 1) - 0.60 0.90
Forward Voltage VF IF=25A, VGE=0 - 2.0 2.8 V
. IF=25A, VGE = -10V
Reverse Recovery Time trr di/dt=400A/ps - 0.10 0.25 #s
. Transistor Stage - - 0.6 o
Thermal Resistance Rth (i-e) Diode Stage - - 1.0 C/W
1998-06-10 2/7
TOSHIBA MG25Q6ES50
(Note 1) Switching Time Test Circuit & Timing Chart
1998-06-10 3/7
TOSHIBA
MG25Q6ES50
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT 10 (A)
COLLECTOEEMITTER VOLTAGE VCE (V)
IC - VCE
VGE = 7V
COMMON EMITTER
Tc = 25''C
2 4 6 8
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE - VGE
COMMON EMITTER
Tc = 25°C
4 8 12 16
GATE-EMITTER VOLTAGE VGE (V)
VCE - VGE
COMMON EMITTER
Te = - 40°C
4 8 12 16
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOREMITTER VOLTAGE VCE (V) COLLECTOR CURRENT 10 (A)
COLLECTOR CURRENT 1C (A)
IC - VCE
VGE =7V
COMMON EMITTER
Tc = 1 25''C
2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE - VGE
COMMON EMITTER
To = 125°C
4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
10 - VGE
Te-- 125°C
COMMON EMITTER
VCE = 5V
4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
1998-06-10 4/7
TOSHIBA
MG25Q6ES50
SWITCHING TIME (/18)
SWITCHING LOSS (mJ)
SWITCHING TIME - IC
COMMON EMITTER
Vcc=600V
VGE= i 15V Tc=25°C
Rg=510 - Tc=125°C
10 100
COLLECTOR-CURRENT 1C (A)
SWITCHING LOSS - IC
COMMON EMITTER
Vcc=600V
VGE= 115V Tc=25°C
Rg=510 --- Tc=125°C
10 100
COLLECTOR-CURRENT IC (A)
SWITCHING TIME (/18)
SWITCHING LOSS (mJ)
SWITCHING TIME - RG
COMMON EMITTER
Vcc=600V
VGE = i 15V Tc=25°C
10:25A - - Tc=125°C
100 1000
GATE RESISTENCE RG (Q)
SWITCHING LOSS - RG
COMMON EMITTER
Vcc=600V
VGE = i15V
IC=25A
Tc=25°C
- - - - Tc=125°C
100 1000
GATE RESISTENCE RG (Q)
1998-06-10 5/7
TOSHIBA MG25Q6ES50
C - VCE VCE, VGE - QG
5000 g
f; 600 y
Pp 1000 E,
Q iF-ia,' g
a M 400 2
s4 g: M
5 COMMON EMITTER - m
g 100 VGE=0V E E
g f=1MHz g 200 g
Tc=25°C t; ,
30 a <
1 10 100 1000 " ©
C0LLECT0R-EMITTER VOLTAGE VCE (V) D o 40 80 120 160
CHARGE QG (nC)
IF - VF a tin, Irr, Edsw - IF
s - pe,
E". G? r; g
J/f, 1
a t © v
E a o M
ttt ao trn m
D E 3: m
o - :1 o
a ' .J
i', t» 8 y-, 0.1
< 0 w as .
3 > ttt >
g 8 m 8 COMMON CATHODE
v, COMMON CATHODE a 2 m VCC=600V
M b2 a: = - Tc=25°C
VGE=0V m > ca VGE 10V - v
Egg dija--400Aos-Tc=125''c
0 1 2 3 4 5 y E g 0'010 10 20 30
FORWARD VOLTAGE VF (V) a: a. at FORWARD CURRENT IF (A)
SHORT CIRCUIT SOA
Rth (t) - tw
Te = 25°C
DIODE STAGE 100
TRANSISTER STAGE
Vcc=900V
tw= lOps
VGE = i 15V
Tj=125°C
TRANSIENT THERMAL RESISTANCE
Rth(t) (°C/W)
COLLECTOR CURRENT 1C (A)
0.001 0.01 0.1 l 10 0 200 400 600 800 1000 1200 1400
PULSE WIDTH tw (s) C0LLECT0RaMITTER VOLTAGE VCE (V)
1998-06-10 6/7
TOSHIBA
COLLECTOR CURRENT 10 (A)
REVERSE BIAS SOA
Trs 125°C
VCE-- :15v
RG--51n
200 400 600 800 1000 1200 1400
COLLECTOR-EMITTER VOLTAGE VCE (V)
MG25Q6ES50
1998-06-10 7/7
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