MG20G6EL1 ,High Power Switching ApplicationsTOSHIBA {DISCRETE(OPTO} "ID 1)ull'1?Ti'ii!s0 UDLEELB l, rI9997250 TOSHIBA (DISCRETE/OPTO) 900 16213 ..
MG25Q2YS40 ,N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)APPLICATIONS.3-M5-FAST- ON- TAB #110'es, i 2-65.6d:0.3High Input ImpedanceHigh Speed :tf= 0.5ps (Ma ..
MG25Q6ES42 ,N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)APPLICATIONS.92.7i0.6ll .5+0.6 8 2:b0.3 '2155:}:03O The Electrodes are Isolated from Case. . >303 1 ..
MG25Q6ES50 ,N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)APPLICATIONS71 * 0.8 or16.0 d: 0.5 60.96 d: 0.5 0’9_ lla |1:94..nr. _ .b' .b.6,a+n,5.- tb-u-trua-W/ ..
MG25Q6ES50A ,N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)APPLICATIONS71+0.860'96+0;5,16.0 1 0.5w,1b.Z4iU.bO The Electrodes are Isolated from Case. comm "ll- ..
MG25Q6ES51 ,N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)APPLICATIONS71 * 0.8 or16.0 d: 0.5 60.96 d: 0.5 0’9_ lla |1:94..nr. _ .b' .b.6,a+n,5.-F.iiFiLir1i1_ ..
MIC6315-31D3U , Open-Drain μP Reset Circuit
MIC6315-31D3UY , Open-Drain μP Reset Circuit
MIC6315-31D3UY , Open-Drain μP Reset Circuit
MIC6315-31D4UY , Open-Drain μP Reset Circuit
MIC6315-31D4UY , Open-Drain μP Reset Circuit
MIC6315-40D2UY , Open-Drain μP Reset Circuit
MG20G6EL1
High Power Switching Applications
TOSHIBA {DISCRETE(OPTO} "ID DED “10517250 UULEELB l, fl"
9997st TOSHIBA tDtSCRETE/OPTOy 900 16213 0743-35 I
SEMICONDUCTOR TOSHIBA GTR MODULE A E
Mczocacm RG20G6BLI
TECHNICAL DATA
SILICON NPN TRIPLE DIFFUSED TYPE
HIGH POWER SWITCHING APPLICATIONS.
MOTOR CONTROL APPLICATIONS. tfG20t?6CL1 um; Itt mm f
" P AB
FEATURES t
. The Collector is Isolated from Case
. 19 or 6 Darlington Transistors including
--lo- ll
TH Hrs
Free Wheeling Diodes are Built-in to
1 package
. High DC Current Gain
t hFE=100(Hin.) (Ic=20A) _ m
. Low Satulation Voltage
t VCE(sat)=2V(Hax.) (Ic=20A) -
EQUIVALENT CIRCUIT "
.B00--a BYO-. JEDEC -
--t; I L ' EIAJ -
" TOSHIBA 2-6BAIA
EU 04, oo Height t 140g
mo--------
BYO-- l; /"o-) K: HG20G6EL1 Unit in mm
1o-PAter-oterAas +110
5Hrgu3T-0N-TAB +250
HGZOGAGLI
JEDEG _
EIAJ J
TOSHIBA 2-60LA
Height t 180g
RG20G6ELI
TOSHIBA CORPORATION
GTIA2A
- 219 -
TOSHIBA 4H)ISCRli:Tli:/0PT0:r 'UI DE “1057250 UDLEELH ll [I
9097250 TOSHIBA (DISCRETE/OPT'O) 900 16214 ir'ras3-3dr
(ahii. SEMICONDUCTOR
M G 2 0 G G
TECHNICAL DATA 4 L 1
M G 2 0 G 6 E L 1
MAXIMUM RATINGS (Ta-25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage cho 600 ll
Collector-Em' Sustaining Voltage VCEX(SUS) 600 V
Collector-Emittet Sustaining Voltage cho(sus) 450 ll
Emitter-Base Voltage VEBO 6 V
DC Ic 20 A
Collector Current
lms ICP tro A
DC IF 20 A
Forward Current
lms IFM 40 A
Base Current: I3 2 A
Collector.Power Dissipation (Tc=25°C) Pc 125 w
Junction Temperature Td 150 "c
Storage Temperature Range Tstg -60--125 °C
Isolation Voltage V1501 2500 (AC 1 Minute) ll
Screw Torque - 30 kg-cm
ELECTRICAL CHARACTERISTICS (Ta---25''C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX UNIT
Collector Cut-off Current ICBO VcB=600V, 15:0 - - 1.0 mA
Emitter Cut-off Current TEBO VEB=6V, Ic=0 - - 100 mA
Co0ectoc-Eittitter ' E -
Sustaining Voltage VCE0(SLS rc 0.5A, L=40mil 450 - - V
DC Current Gain hFE VCE=SV. Ic=20A 100 - ...
Collector-Emitter
VCE(sat) - - 2.0 V
Saturation voltage Ic=20A, [3:0 SA
Base-emitter ,
Saturation Voltage Vtsii(sat) . - - 2,5 V
Turn-on Time ton {"937 “'15:? - - 1.0
r soga G
Switching Time Storage Time tstg -53 tBe - - - 12 ‘us
:3z=_;32= 5A v~n=scsv
Fall Time If bg Y .."rgt,iil=a5.8 - - 2.0
Forward Voltage " IF-ZOA, [3-0 - - 1.6 v
IF=20A, VBEH-ZV
Reverse Recovery Time Err _ - - 0.7 MS
d1/gc=60A/us
Thermal Resistance Rthti-c) - - 1.0 "c/u
TOSHIBA CORPORATION
STIAZA
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TOSHIBA {DISCRETE/OPTO} - =10 1)lrll'uv'ri'ii"iil mru, if
9097250 TOSHIBA (DISCRETEIOPTO) 900 16215 01533-35-
afitan SEMICONDUCTOR H G 2 0 G 4 G L 1
' N G 2 o c 6 E L 1
TECHNICAL DATA
ll t - 19 "i? -Ic - VEOO
so BE(ea ) V b0
Zn comm» EMTTTER o so COMMON coumcron
o> ' I o 1
EV IB=05A
h g: g 10
m III C9 '0 o
ty''' a G J) ,
Tc=-40‘C m ,
I 2 25 tl
'il?, 125 g 05
m’ “31 n5 1 :5 10 so a
COLLECTOR CURRENT lg (A) g al
o o t C18 1.2 1,6 2.0
20 SWITCHING TIME _ IO 1!lMrTTER-C01,LW3r0R VOLTAGE VEco (v)
t COMMON
11anme SAFE OPERATING AREA
A Tc=25'C
t vcc=soov . SINGLE NONREPETITIVE PULSE
V I =et:ttt5A Te = 25.0
B cunvms MUST BE DERATED LINEARLY
g WITH INCREASE IN TEMPERATURE.
E v 50 lo MAX. (PULSED) is
a J? GO (o 'o
(4 g 'o
E E It; MAX. . .
E 10 (CONTINUOUS
4 e 12 " m a m S 1
COLLECTOR CURRENT lo (A) 8
REVERSE BIAS SOA 03
1 3 10 so 100 300 1000
C? 40 TJSlzs’c tmraaorpt-utrrrkrt VOLTAGE VCE (v)
1 V -rB=LOA
J? 32 vBE=-sv
GOO 400 500 600 700
t70LLEoT0B-EMITTl!IR VOLTAGE VCE (v)
TOSHIBA CORPORATION
GTIA2A
TOSHIBA 4H)TSCRlr'l'E/0PT()3. W‘lD 'Clmo'ri'iesn UUlEE‘lb l T,
-irtriiiriiiiii TOSHIBA (DISCREjl'E/dPTb -- 960 16216 Dr-33-ar 1
SEMICONDUCTOR H G 2 9 G 4 G L 1
gii%n M c 2 o G 6 E L 1
TECHNICAL DATA _ '
M10 VcE - 10 Vol: - lo
COMMON EMITTER COWON EMITTER
Te=ast; Tc=-40t
g loo ,
> tr V: -
',si an 54 cr é d)
, 0 i)
g ti cr g
aso " 32 40 t8 3 16 " 52 AO It?
COLLECTOR CURRENT lo (A) COLLECTOR CURRENr Is (A)
VCE - "
m COMMON EMITTER
g Tc=125t hFE - IO
: comm mxmm
J' 100 VCE=5V
g 50 f?
2 GO ii
g 10 g
Pc=25w
COLLECTOR CURRENT Io (A)
TOSHIBA CORPORATION
GTIA2A
-222 -
1 t13 1 8 10 30
COLLECTOR CURRENT lo (A)
TOSHIBA forctieirl'liv()p'l'()ir - i ntl 1rii:fPivi'i'i?50 DDLEAEL'? El T
9097250 TOSHIBA (DISCRETEIOPTO) 900 16217 DT'33.-35V
SEMICONDUCTOR M‘GQ‘O'W,
TECHNICAL DATA MC2006ELI
. ; '' L' .,',"I{“Ei't
TOSHIBA CORPORATION
G'HAZA
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TOSHIBA 4H)TSCRlrl'E/()pT()y
9097250 *TOSHIBA (DISCRETE/OPTO)
(Urrffiiitir SEMICONDUCTOR MG2OGAGLI
TECHNICAL DATA MC~2OGSEL|
Em mi:lyuvrizsuo 001.5213; 5 T
900 16218 DTu37r-gs-
;04 a I0 ' ep Io’
TOSHIBA CORPORATION
GTIA2A
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