MG15G6EL1 ,GTR ModuleTOSH_IBA f0TSCREyl'E/0PT01 'Ul DEIHU‘TESEI UULEEDB. El r9097250 TOSHIBA tD1SCRETE/OPTtD 900 16203 D ..
MG15Q6ES42 ,N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)APPLICATIONS.r------"--'-'?--'--------------,O The Electrodes are Isolated from Case.14IU..5’I A TG ..
MG15Q6ES50A ,N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)APPLICATIONS71+0.860'96+0;5,16.0 1 0.5w,1b.Z4iU.bO The Electrodes are Isolated from Case. comm "ll- ..
MG15Q6ES51 ,N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)APPLICATIONS71 * 0.8 or16.0 d: 0.5 60.96 d: 0.5 0’9_ lla |1:94..nr. _ .b' .b.6,a+n,5.-F.iiFiLir1i1_ ..
MG200H1AL2 ,(DISCRETE/OPTO)---TOSHIBA .fIyirSCREyi'E/0PT01 =10 oE:lllmyri'ii!siuo P1iiiyi'n 3 Ill.9Q97250 TOSHIBA orscmzrE/tvr ..
MG200H1FL1A ,V(cbo): 600V; V(ceo): 600V; V(ebo): 6V; 800W; IGBT module---TOSHIBA .fIyirSCREyi'E/0PT01 =10 oE:lllmyri'ii!siuo P1iiiyi'n 3 Ill.9Q97250 TOSHIBA orscmzrE/tvr ..
MIC6211-YM5 , IttyBitty Operational Amplifier
MIC6270YM5 , IttyBitty Comparator
MIC6270YM5 , IttyBitty Comparator
MIC6315-26D2UY , Open-Drain μP Reset Circuit
MIC6315-26D3U , Open-Drain μP Reset Circuit
MIC6315-26D3UY , Open-Drain μP Reset Circuit
MG15G6EL1
GTR Module
TOSHIBA f0TSCRETir/0pT01 M 'Ul DEDHU‘ITESU DULEEDEI. 3
9097250 TOSHIBA tDiSORETE/t3PTtD 900 16203 Dt-33-3S"
l TOSHIBA GTR MODULE
m.“ SEMICONDUCTOR
TECHNICAL DATA
HGlSGAGLl HGISG6EL1
SILICON tlPll TRIPLE DIFFUSED TYPE
HIGH POWER SWITCHING APPLICATIONS.
MOTOR CONTROL APPLICATIONS. MGISGAGL] Unit Inmm
" FABTOR-‘MB +110x7
FEATURES ,
.The Collctor is Isolgted from Case
" or 6 Darlington Transistors including
Free Wheeling Diodes are Built-in to
1 package
.High DC Current Gain
' hFE=100(Min.) (IC=ISA)
.Low Saturation Voltage
t VCE(Sat)=2V(Hax.) (Ic=15A)
EQUIVALENT CIRCUIT
ssuo-t Birth--- JEDEG -
-t " It EIAJ -
" a TOSHIBA 2-68AIA
EO _ "HI Height t 140g
- 'Wo-------
"o-tl, Bio--
--t i: ---t K MG15G6EL1 Unit in mm
N . gr W as FAST-ON-TAB nox 10
- ' ' E- PAST-0tl-TAB izsoxs
HG1504GLI
JEDEC -
HGISG6EL1 BIAS _ -..
TOSHIBA 2-66AIA
Weight t 180g
TOSHIBA CORPORATION
GTIAZA
‘TO'SHIBA {DISCRETE/OPTO} =10 DE TabwéSn UULEEULI 5
--- ----- -
9097250 TOSHIBA (DISCRETEIOPTO> 900 16204. 0+..33,35
'Ei"tiC' SEMICONDUCTOR
o H G 1 5 c 4 G L 1
iiiliii'k"fi'i TECHNICALDATA . HG 1 506E1 1
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Couector-Base Voltage VCBO 600 V
Collector-Emi) Voltage VCEO 600 V
Collector-Emitter Sustaining Voltage VCE0(SUS) 450 ll
Emitter-Base Voltage VEBO 6 V
DC Ic 15 A
Collector Current 1ms 1c 30 A
DC -rc . 15 A
Base Current 13 l A
Collector Power Dissipation (Tc=25°C) PC 100 W
Junction Temperature Tj 150 "c
Storage Temperature Range Tstg -40-..125 "c
Isolation Voltage V1501 2500(AC'1 Minute) V
Screw Torgue 30 kg-cm
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cuc-off Current IcBO VCB=600V, [E=0 - - 1.0 mA
Emitter Cut-off Current IEBO VEB=6V, Ic=0 . - - 100 mA
Collector-Emitter
Sustaining Voltage .
DC Current Gain hFE VCE=5V, Ic=lSA 100 - -
collector-emitter
1lcEo(sus Ic=0.5A, L=40mH 450 - ... ll
. . ll - - 2.0 ll
1a,1Cl1"t'e?"ta" CE(sat) TC--r5A, IB--0.4A
Saturation Voltage VBE(sat) _ - - 2,5 V
Emitter-Collector Voltage Veco IE=15A, 13=o . - - 1.6 ll
Reverse Recovery Time trc -Ic=15A,VEB=2V,VCE=3OOV - - 0.7 as
Collector Output Capacitance Cob VCB=50V, IE=0, f=lMHz - 400 - pF
Turn-on Time ton sousrun” Lrsl OUTPUT - - 1.0
tvFl, a; g .
Switching Time Storage Time tstg _ 152 N - - 12 n5
I =--r =ty4A V =800V
Fall Time " BI B2 cc - - 2,0
DUTY cycng=05%
Thermal Resistance .
(Junction to Case) Rthirc) - - 1.25 cN
TOSHIBA CORPORATION
TOSHIBA /DrilCRliyl'El)p'l'()1
=11] oii1F'ri'ii?iirl UULEEDS 7 T
I SEMICONDUCTOR
'Et TECHNICAL DATA
9097250 TOSHIBA tDtSCRETE/OPTtD - SOD 16205 DTT-BB-as
MGISGAGLI
MGISG6BL1
VCE - 1c
A COMMON
> EMITTER
g Tc=-40C l
g 50 n
S _ tD
g i', i?
> t. tlt
ti oop
t 12 16
COLLECTOR CURRENT
VCE - "
COWON EMITTER
A 300 - .
> Tsr=12trc
i-1 IC
0 4 8 12 16 21) "
COLLECTOR C UREENT
TOSHIBA CORPORATION
VCE - Ic
COMMON EMITTER
I c = 25'C
A ttt "
oss H c
COLLECTOR-EMITTER VOLTAGE VCE (V)
G2 04812162324$32
COLLECTOR CURRENT IC (A)
hFE - Ic
e. 500 f
" s'?.
z to W"
3 common EMITTER
Veg: 5V
Ill 03 1 3 10 so
COLLECTOR CURRENT Io (A)
tet VBE(sat) - tc
35 COMMON EuITTER
32 a 3 1tr="-UA
ti a l
ttttr 1
a1 (13 1 G 10 GO
COLLECTOR CURRENT [c (A)
_ "'sae=tpc, .
TOSHIBA II)1SCRETE/()PTt)iy
=10 DEU‘ID'WQSD Cll31iaii!0l, n T
9097250 TOSHIBA tD1St2RETE/OPTOy 900 16206 trr-BB-BS
mm SEMICONDUCTOR
iWstt TECHNICAL DATA
MG15G4GL1
MGISG6EL1
-rc _ VECO SWITCHING TIM: - ic
5 cumcu CULLb',CT0rs
i5 v cannon EMITTER
g, 'f, vcc=soov
E; g 15:10“
a a Te---2trc
l u 1.2 1.6 2.0 2,4 243 :32 o 2 ' 6 e m 12 " 16 i
EMITTER-COLLECTOR VOLTAGE V500 (VI COLLECTOR CURRENT Ic (At
SAFE GPERATIHG AREA REVERSE BIAS 805. i
' tc MAXJP'JLSED) ..'. ' TjGraec .
l 28 -IB=cc8A l
A - Vas =ev '.
< 6,. < {.3
- . V _ v 24
O to MAX. 'te. O
F-. (CJNTINL’OU "t, -
Fr F. h! au..' . F 20
a iid. ',
= 1" 12 .
3 .9 swam uounapmnrv " 8 '
g wLSE Tc=25'c g
CURVES MOST Bi?, REBATED co 4
LINEARLY WITH INCREASE
t IN TEMPERATURE o
MO 500 600 700
W7LLlgCr0tt-BMTTTEt1 VOLTAGE VCE (V)
i COLLECTGR-EMITTER VOLTAGE VCE (V)
TOSHIBA CORPORATION
'GTIAZ
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st,' TOSHIBA II)IS0ETE/()pT01. TI mrlilmvr7ii!50 UDLEED? 0 [ll
9097250 TOSHIBA (DISCRETE/OPTO) 90D 16207 DT-33-3s
SEMICONDUCTOR M0564“.
TECHNICAL DATA MCISGBELI
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TOSHIBA CORPORATION
GTIA2A
TOSHIBA {DISCRETE/OPTO}
SEMICONDUCTOR
TECHNICAL DATA
stu.lu.ccs2yir, v...', It -
a di/dt-. 6CA/[l3
WE t-znr
.F'E; Tez-Z'Sc
9097250 TOSH I BA" (D I SCRETE IOPTO)
'. id1
900 16208
D'F33~35‘
N/Cl5Cd0,Ll
h/0,ECi.6ELI
GTIA2A
TOSHIBA CORPORATION
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