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MG150J1BS11
N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS)
TOSHIBA MG150J1BS11
TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
MG1l50J'ilBS'il1
HIGH POWER SWITCHING APPLICATIONS Unit in mm
MOTOR CONTROL APPLICATIONS
8.010.5 8.0105 "7]
0 High Input Impedance m _
0 High Speed : tf=1.0ps (Max.) (Ic=15OA) sat S Iv',?,'.
0 Low Saturation Voltage : VCE (sat)=2.7V (Max.) (10:150A) E 32.6e0.4 L' ‘3:
o Enhancement-Mode S, 43.3 t 0.3 a;
0 The Electrodes are Isolated from Case. 34.6t0.4
EQUIVALENT CIRCUIT m l, A , l, I
C L1 1 el., ! J 1 " I I
Go-l 'fi;
JEDEC -
EIAJ -
TOSHIBA 2-33F1A
MAXIMUM RATINGS (Ta =25°C) Weight : 86g
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Emitter Voltage VCES 600 V
Gate-Emitter Voltage VGES 1'20 V
DC IC 150
Collector Current 1ms ICP 300
Collector Power Dissipation PC 450 W
Junction Temperature Tj 150 ''C
Storage Temperature Range Tstg -40-125 ''C
. 2500
Isolation Voltage V1501 (AC 1 minute) V
Screw Torque (Terminal/Mounting) - 2/ 3 Nun
961001EAA1
OTOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid
situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or
damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions
and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook.
OThe information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third
parties which may result from its use. No license is granted by implication or otherwise under any intellectual
property or other rights of TOSHIBA CORPORATION or others.
OThe information contained herein is subject to change without notice.
1997-03-03 1/4
TOSHIBA MG150J1BS11
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGES VGE = i20V, VCE =0 - - 1500 nA
Collector Cut-Off Current ICES VCE = 600V, VGE =0 - - 1.0 mA
Gate-Emitter Cut-Off Voltage VGE (off) VCE = 5V, IC = 150mA 3.0 - 6.0 V
Collector-Emitter Saturation
Voltage VCE (sat) 1C - 150A, VGE - 15V - 2.3 2.7 V
Input Capacitance Cies VCE = 10V, VGE = 0, f = 1MHz - 12000 - pF
Rise Time tr - 0.3 0.8
Switching Turn-On Time ton +15V cy-IC)-] g - 0.4 1.0
Time Fall Time tf 0 IL,- 15V - 0.6 1.0 (t
Turn-Off Time toff 300V - 1.0 1.6
Thermal Resistance Rth (i-e) - - 0.278 T / W
1997-03-03 2/4
TOSHIBA
MG150J1BS11
1C (A)
COLLECTOR CURRENT
COLLECTOR—EMIT’I‘ER VOLTAGE VCE
COLLECTOR CURRENT 1C (A)
IC - VCE
20 15 12
COMMON EMITTER
Te = 25°C
160 IO
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE - VGE
COMMON
EMITTER
Tc = 25°C
IC=60A
0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
IC - VGE
COMMON EMITTER // "
VCE=5V // 25 125
Te = - 40'C
0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMI'ITER VOLTAGE VCE
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR—EMI’I’I‘ER VOLTAGE VCE
VCE - VGE
COMMON
EMITTER
To = - 40°C
1C=60A
4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
VCE - VGE
COMMON
EMITTER
Te = 125°C
IC = 60A
4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
VCE, VGE - QG
COMMON
EMITTER
RL = 20
Tc = 25'C
200 400 600 800 1000
CHARGE QG (nC)
GATE—EMITTER VOLTAGE VGE (V)
1997-03-03 3/4
TOSHIBA
MG150J1BS11
SWITCHING TIME - 1C
"ii? 0.5
= COMMON
E EMITTER
3 V =300V
© 0.1 CC
VGE=i15V
Rg=130
Tc--25''C
0 40 80 120 160 200
COLLECTOR CURRENT 10 (A)
C - VCE
CAPACITANCE C (pF)
COMMON EMITTER
VGE = 0
f-- IMH
Te = 25°C
0.3 1 3 10 30 100 300 1000
C0LLECT0R-EMITTER VOLTAGE VCE (V)
SAFE OPERATING AREA
1000 lllllll l llllllll
lllllll lllllllll
A IC MAX. (PULSED) y.f
s, 300,,,oo Tlllrlrlf , N' .."
10 MAX. (CONTINUOUS) _ lates yy: -
S? N NN
Es 100 i
z . - - x
g EDC OPEREATION _ 1mm -uu00psyd.
D 30 I llllll I I I ll \
o l llllll l l l ll A N
t .y.4 SINGLE N 't
F 10 NONREPETITIVE ',
a PULSE Tc=25°C _
j CURVES MUST BE
8 3 DERATED LINEARLY \
WITH INCREASE IN
1 TEMPERATURE. l
0.3 1 3 10 30 100 300 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
THERMAL TRANSIENT RESISTANCE
SWITCHING TIME (/15)
Ru. 0;) “CNN
10 (A)
COLLECTOR CURRENT
0.01 -
SWITCHING TIME - RG
COMMON EMITTER
VCC = 300V
0.1 VGE = i 15V
10 = 150A
0.05 Tc = 25°C
1 10 30 100 300
GATE RESISTANCE RG (Q)
Rth(t) - tw
Tc=25°C
10 3 10-2 IO-l 100 101
PULSE WIDTH tw (s)
REVERSE BIAS SOA
TjS 125°C
VGE= t16V
RG-- 130
100 200 300 400 500 600 700
COLLECTOR-EMITTER VOLTAGE VCE (V)
1997-03-03 4/4
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