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MG100Q2YS65H
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
MG100Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT
MG100Q2YS65H High Power & High Speed Switching Applications High input impedance Enhancement-mode The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta ��� � 25°C)
Unit: mm
Weight: 255 g (typ.)
G1 E1/C2
E2
G2 C1
