MCR8D ,Silicon Controlled Rectifiers Reverse Blocking ThyristorsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MCR8D ,Silicon Controlled Rectifiers Reverse Blocking ThyristorsMaximum ratings applied to the device are individual stress limit values (notnormal operating condi ..
MCR8DCM ,Silicon Controlled Rectifiers2MCR8DCM, MCR8DCNVoltage Current Characteristic of SCR+ CurrentAnode +VSymbol ParameterTMV Peak Rep ..
MCR8DCMT4 ,Silicon Controlled RectifiersELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristics Symbol Min Typ Max Uni ..
MCR8DCN ,Silicon Controlled RectifiersMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value Unit4YWWPeak Repetitive Off−S ..
MCR8DSM ,Silicon Controlled RectifiersMAXIMUM RATINGS (T = 25°C unless otherwise noted)J4Rating Symbol Value UnitYWWDPAKPeak Repetitive O ..
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MCR8D
Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR8N
Silicon Controlled Rectifiers
Reverse Blocking ThyristorsDesigned primarily for half-wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half−wave, silicon gate−controlled devices are needed.
Features Blocking Voltage of 600 thru 800 Volts On−State Current Rating of 8 Amperes RMS at 80°C High Surge Current Capability − 80 Amperes Rugged, Economical TO−220AB Package Glass Passivated Junctions for Reliability and Uniformity Minimum and Maximum Values of IGT, VGT and IH Specified
for Ease of Design High Immunity to dv/dt − 100 V/�sec Minimum at 125°C Pb−Free Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings
of the devices are exceeded.
