MCR704A ,Silicon Controlled RectifiersTHERMAL CHARACTERISTICSCharacteristic Symbol Min Max UnitThermal Resistance, Junction to Case R — 8 ..
MCR704A ,Silicon Controlled Rectifiers0.1650.1184.191 3.00.1002.540.0631.6**Order this documentSEMICONDUCTOR TECHNICAL DATA by MCR703A/D* ..
MCR706 ,Silicon controlled rectifier. Reverse blocking triode thyristor. Repetitive peak forward and reverse blocking voltage 400 V.MOTOROLA SC (DIODES/OPTO) ESE I) " 5357255 UUBLLEH 5 I"TC.- cur-- A3I I _ I ISilicon Controlled Ree ..
MCR706 ,Silicon controlled rectifier. Reverse blocking triode thyristor. Repetitive peak forward and reverse blocking voltage 400 V.MOTOROLA SC (DIODES/OPTO) ESE I) " 5357255 UUBLLEH 5 I"TC.- cur-- A3I I _ I ISilicon Controlled Ree ..
MCR706A ,Silicon Controlled RectifierMAXIMUM RATINGS (T = 25°C unless otherwise noted.)JACharacteristic Symbol Value UnitGPeak Repetitiv ..
MCR706AT4G , Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
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MCR703A-MCR704A-MCR706A-MCR708A
Silicon Controlled Rectifiers
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Reverse Blocking Triode Thyristors. . . PNPN devices designed for high volume, low cost consumer applications such as
temperature, light and speed control; process and remote control; and warning
systems where reliability of operation is critical. Small Size Passivated Die Surface for Reliability and Uniformity Low Level Triggering and Holding Characteristics Recommend Electrical Replacement for C106 Available in Two Package Styles:
Surface Mount Leadforms — Case 369A
Miniature Plastic Package — Straight Leads — Case 369
ORDERING INFORMATION To Obtain “DPAK” in Surface Mount Leadform (Case 369A):
Shipped in Sleeves — No Suffix, i.e., MCR706A
Shipped in 16 mm Tape and Reel — Add “RL” Suffix to Device Number, i.e.,
MCR706ARL To Obtain “DPAK” in Straight Lead Version:
Shipped in Sleeves — Add ‘1’ Suffix to Device Number, i.e., MCR706A1
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or
negative gate voltage; however, positive gate voltage shall not be applied concurrent with
negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
