MCR12LN ,Silicon Controlled Rectifiers2MCR12LD, MCR12LM, MCR12LNVoltage Current Characteristic of SCR+ CurrentAnode +VSymbol ParameterTMV ..
MCR12LNG , Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12M ,Silicon Controlled RectifiersTHERMAL CHARACTERISTICSCharacteristic Symbol Value UnitThermal Resistance — Junction to Case R 2.2 ..
MCR12N ,Silicon Controlled RectifiersELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MCR12N ,Silicon Controlled Rectifiers• Blocking Voltage to 800 Volts• On–State Current Rating of 12 Amperes RMS at 80°CSCRs• High Surge ..
MCR16D ,Sillicon Controlled Rectifiers Reverse Blocking ThyristorsMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value Unit4(1)Peak Repetitive Off–S ..
MIC2561-1YM , PCMCIA Card Socket VCC and VPP Switching Matrix
MIC2561-1YM , PCMCIA Card Socket VCC and VPP Switching Matrix
MIC2563A-1BSM , Dual Slot PCMCIA/CardBus Power Controller Preliminary Information
MIC2563A-1BSM , Dual Slot PCMCIA/CardBus Power Controller Preliminary Information
MIC2563A-1BSM , Dual Slot PCMCIA/CardBus Power Controller Preliminary Information
MIC2563A-1BSM , Dual Slot PCMCIA/CardBus Power Controller Preliminary Information
MCR12LD-MCR12LM-MCR12LN
Silicon Controlled Rectifiers
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Preferred Device--
Reverse Blocking ThyristorsDesigned primarily for half–wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half–wave, silicon gate–controlled devices are needed. Blocking Voltage to 800 Volts On–State Current Rating of 12 Amperes RMS at 80°C High Surge Current Capability — 100 Amperes Rugged, Economical TO–220AB Package Glass Passivated Junctions for Reliability and Uniformity Minimum and Maximum Values of IGT, VGT and IH Specified for
Ease of Design High Immunity to dv/dt — 100 V/μsec Minimum at 125°C Device Marking: Logo, Device Type, e.g., MCR12LD, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage
ratings of the devices are exceeded.
