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Partno Mfg Dc Qty AvailableDescript
MCR08BN/a119539avaiSensiteve Gate Silicon Controlled Rectifier
MCR08BT1ONN/a1500avaiSCR 0.8 AMPERE RMS 200 thru 600 Volts
MCR08MT1ONN/a5980avaiSensitive Gate Silicon Controlled Rectifier


MCR08B ,Sensiteve Gate Silicon Controlled RectifierELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
MCR08BT1 ,SCR 0.8 AMPERE RMS 200 thru 600 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value Unit4(1)Peak Repetitive Off–S ..
MCR08BT1G , Sensitive Gate Silicon Controlled Rectifiers
MCR08MT1 ,Sensitive Gate Silicon Controlled Rectifier3MCR08B, MCR08M16010150LTYPICAL140MAXIMUM130DEVICE MOUNTED ONL1201.0 24FIGURE 1 AREA = L110PCB WITH ..
MCR08MT1G , Sensitive Gate Silicon Controlled Rectifiers
MCR100-006 ,Sensitive Gate Silicon Controlled RectifiersELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
MIC2546-1YM , Dual Programable Current Limit Switch
MIC2546-1YM , Dual Programable Current Limit Switch
MIC2546-1YTS , Dual Programable Current Limit Switch
MIC2546-2BTS , Dual Programmable Current Limit Switch Preliminary Information
MIC2546-2BTS , Dual Programmable Current Limit Switch Preliminary Information
MIC2546-2YM , Dual Programable Current Limit Switch


MCR08B-MCR08BT1-MCR08MT1
Sensiteve Gate Silicon Controlled Rectifier
-Preferred Device---
Reverse Blocking Thyristors

PNPN devices designed for line powered consumer applications
such as relay and lamp drivers, small motor controls, gate drivers for
larger thyristors, and sensing and detection circuits. Supplied in
surface mount package for use in automated manufacturing. Sensitive Gate Trigger Current Blocking Voltage to 600 Volts Glass Passivated Surface for Reliability and Uniformity Surface Mount Package Device Marking: MCR08BT1: CR08B; MCR08MT1: CR08M, and
Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant source such that the voltage
ratings of the devices are exceeded.
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