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MC74VHC04MMOTON/a1100avaiHex Inverter
MC74VHC04MMOTN/a11avaiHex Inverter


MC74VHC04M ,Hex Inverter**SEMICONDUCTOR TECHNICAL DATA **The MC74VHC04 is an advanced high speed CMOS inverter fabricatedwi ..
MC74VHC04M ,Hex InverterMAXIMUM RATINGS*Symbol Parameter Value UnitThis device contains protectionÎÎÎcircuitry to guard aga ..
MC74VHC04MEL ,Hex InverterELECTRICAL CHARACTERISTICS (Input t = t = 3.0ns)r fÎ T = 25°C T = –40 to 85°CA AÎÎÎÎÎÎ MinÎÎÎ TypÎÎ ..
MC74VHC04MEL ,Hex Inverter3MC74VHC04OUTLINE DIMENSIONSD SUFFIXSOIC–14CASE 751A–03ISSUE FNOTES:1. DIMENSIONING AND TOLERANCING ..
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MDP1603-101G ,Thick Film Resistor Networks, Dual-In-Line, Molded DIP, 01, 03, 05 SchematicsELECTRICAL SPECIFICATIONSMODEL/ SCHEMATIC RESISTOR RESISTANCE STANDARD TEMPERATURE TCR WEIGHTNO. OF ..
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MC74VHC04M
Hex Inverter
SEMICONDUCTOR TECHNICAL DATA-
The MC74VHC04 is an advanced high speed CMOS inverter fabricated
with silicon gate CMOS technology. It achieves high speed operation similar
to equivalent Bipolar Schottky TTL while maintaining CMOS low power
dissipation.
The internal circuit is composed of three stages, including a buffer output
which provides high noise immunity and stable output. The inputs tolerate
voltages up to 7V, allowing the interface of 5V systems to 3V systems. High Speed: tPD = 3.8ns (Typ) at VCC = 5V Low Power Dissipation: ICC = 2μA (Max) at TA = 25°C High Noise Immunity: VNIH = VNIL = 28% VCC Power Down Protection Provided on Inputs Balanced Propagation Delays Designed for 2V to 5.5V Operating Range Low Noise: VOLP = 0.8V (Max) Pin and Function Compatible with Other Standard Logic Families Latchup Performance Exceeds 300mA ESD Performance: HBM > 2000V; Machine Model > 200V Chip Complexity: 36 FETs or 9 Equivalent Gates
LOGIC DIAGRAM
A1
Y = A
Pinout: 14–Lead Packages (Top View)

VCC A6 Y6 A5 Y5 A4 Y4
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