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MC33154PSTMN/a120avaiSINGLE IGBT HIGH CURRENT GATE DRIVER


MC33154P ,SINGLE IGBT HIGH CURRENT GATE DRIVERELECTRICAL CHARACTERISTICS (V = 20 V, V = 0 V, Kelvin Gnd connected to V . For typical valuesCC EE ..
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MC74HC1G02DFT1G ,Single 2 Input NOR GateELECTRICAL CHARACTERISTICS (Input t = t = 6.0 ns)r fT = 25C T  85C 55C  T  125CA A ASymbol ..
MC74HC1G02DFT2 ,Single 2 Input NOR GateMAXIMUM RATINGSSymbol Parameter Value UnitV DC Supply Voltage 0.5 to 7.0 VCCV DC Input Voltage 0 ..
MC74HC1G02DTT1 ,Single 2 Input NOR GateELECTRICAL CHARACTERISTICSV T = 25C T  85C 55C  T  125CCC A A ASymbol Parameter Test Condit ..
MC74HC1G02DTT1G ,Single 2-Input NOR Gate3MC74HC1G02t tf rINPUTINPUTOUTPUTVCCA or B 90%50%10%CGNDL*t tPLH PHL90%50%10%OUTPUT Y*Includes all ..
MC74HC1G02DTT1G ,Single 2-Input NOR GateMaximum ratings applied to the device are individual stress limitvalues (not normal operating condi ..


MC33154P
SINGLE IGBT HIGH CURRENT GATE DRIVER
ORDERING INFORMATION
Order this document by MC33154/D
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The MC33154 is specifically designed as an IGBT driver for high powered
applications including ac induction motor control, brushless dc motor control,
and uninterruptable power supplies. This device also offers a cost effective
solution for driving power MOSFETS and Bipolar transistors.
Device protections include the choice of desaturation or overcurrent
sensing and an undervoltage lockout to provide assurance of proper gate
drive voltage.
These devices are available in dual–in–line and surface mount packages
and include the following features: High Current Output Stage: 4.0 A Source –2.0 A Sink Protection Circuits for Both Conventional and Sense IGBT’s Current Source for Blanking Timing Protection Against Over–Current and Short Circuit Under–Voltage Lockout Optimized for IGBT’s Negative Gate Drive Capability
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