MBT3946DW1T1G ,Dual General Purpose TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
MBT6429DW1T1 ,Amplifier TransistorsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
MBT6429DW1T1G ,Amplifier Transistors3V , TOTAL NOISE VOLTAGE (nV) I , NOISE CURRENT (pA) e , NOISE VOLTAGE (nV)T n nNF, NOISE FIGURE (d ..
MBU104 , DC/DC CONVERTER 1W Miniature SIP-Package with Industry Standard Pinout
MC010A1 , MC010-Series Power Modules 18 Vdc to 36 Vdc Inputs 10W
MC010B1 , MC010-Series Power Modules 18 Vdc to 36 Vdc Inputs 10W
MC2830D ,Voice Activated Switch(i)) MOTOROLA M62830Product Preview ,VOICE ACTIVATEDVoice Activated Switch SWITCHSILICONThe MC2830 ..
MC2830P ,Voice Activated Switch(i)) MOTOROLA M62830Product Preview ,VOICE ACTIVATEDVoice Activated Switch SWITCHSILICONThe MC2830 ..
MC2831A , LOW POWER FM TRANSMITTER SYSTEM SILICON MONOLITHIC INTEGRATED CIRCUIT
MC2831AP ,10V; 25mA; low power FM transmitter systemRFOscMOTOROLA- SEMICONDUCTOR "l-lil-ll-Ill,TECHNICAL DATALOW POWER FM TRANSMITTER SYSTEMThe MC2831A ..
MC2832 , FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE
MC2833D ,Low Power FM Transmitter SystemOrder this document by MC2833/D ** **LOW POWER* * FM TRANSMITTERMC2833 is a one–chip FM transmitter ..
MBT3946DW1T1G
Dual General Purpose Transistor
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF CHARACTERISTICSCollector−Emitter Breakdown Voltage (Note 2) V Vdc(BR)CEO(I = 1.0 mAdc, I = 0) (NPN) 40 −C B(I = −1.0 mAdc, I = 0) (PNP) −40 −C BCollector−Base Breakdown Voltage V Vdc(BR)CBO(I = 10 Adc, I = 0) (NPN) 60 −C E(I = −10 Adc, I = 0) (PNP) −40 −C EEmitter−Base Breakdown Voltage V Vdc(BR)EBO(I = 10 Adc, I = 0) (NPN) 6.0 −E C(I = −10 Adc, I = 0) (PNP) −5.0 −E CBase Cutoff Current I nAdcBL(V = 30 Vdc, V = 3.0 Vdc) (NPN) − 50CE EB(V = −30 Vdc, V = −3.0 Vdc) (PNP) − −50CE EBCollector Cutoff Current I nAdcCEX(V = 30 Vdc, V = 3.0 Vdc) (NPN)− 50CE EB(V = −30 Vdc, V = −3.0 Vdc) (PNP) − −50CE EBON CHARACTERISTICS (Note 2)DC Current Gain h −FE(I = 0.1 mAdc, V = 1.0 Vdc) (NPN) 40 −C CE(I = 1.0 mAdc, V = 1.0 Vdc) 70 −C CE(I = 10 mAdc, V = 1.0 Vdc) 100 300C CE(I = 50 mAdc, V = 1.0 Vdc) 60 −C CE(I = 100 mAdc, V = 1.0 Vdc) 30 −C CE(I = −0.1 mAdc, V = −1.0 Vdc) (PNP) 60 −C CE(I = −1.0 mAdc, V = −1.0 Vdc)80 −C CE(I = −10 mAdc, V = −1.0 Vdc)100 300C CE(I = −50 mAdc, V = −1.0 Vdc)60 −C CE(I = −100 mAdc, V = −1.0 Vdc)30 −C CECollector−Emitter Saturation Voltage V VdcCE(sat)(I = 10 mAdc, I = 1.0 mAdc) (NPN) − 0.2C B(I = 50 mAdc, I = 5.0 mAdc) − 0.3C B(I = −10 mAdc, I = −1.0 mAdc) (PNP) − −0.25C B(I = −50 mAdc, I = −5.0 mAdc) − −0.4C BBase−Emitter Saturation Voltage V VdcBE(sat)(I = 10 mAdc, I = 1.0 mAdc) (NPN) 0.65 0.85C B(I = 50 mAdc, I = 5.0 mAdc) − 0.95C B(I = −10 mAdc, I = −1.0 mAdc) (PNP) −0.65 −0.85C B(I = −50 mAdc, I = −5.0 mAdc) − −0.95C BSMALL−SIGNAL CHARACTERISTICSCurrent−Gain − Bandwidth Product f MHzT(I = 10 mAdc, V = 20 Vdc, f = 100 MHz) (NPN) 300 −C CE(I = −10 mAdc, V = −20 Vdc, f = 100 MHz) (PNP) 250 −C CEOutput Capacitance C pFobo(V = 5.0 Vdc, I = 0, f = 1.0 MHz) (NPN) − 4.0CB E(V = −5.0 Vdc, I = 0, f = 1.0 MHz) (PNP) − 4.5CB EInput Capacitance C pFibo(V = 0.5 Vdc, I = 0, f = 1.0 MHz) (NPN) − 8.0EB C(V = −0.5 Vdc, I = 0, f = 1.0 MHz) (PNP) − 10.0EB C2. Pulse Test: Pulse Width ≤ 300 s; Duty Cycle ≤ 2.0%.
