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MBRS340FSCN/a57000avaiSchottky Rectifier


MBRS340 ,Schottky RectifierMBRS340MBRS340
MBRS340T3 ,Schottky RectifierMAXIMUM RATINGSRating Symbol MBRS340T3 MBRS360T3 UnitPeak Repetitive Reverse Voltage V 40 60 VoltsR ..
MBRS340TR ,40V 3A Schottky Discrete Diode in a SMC packageapplications are in diskI Rectangular 3.0 Adrives, switching power supplies, converters, free-wheel ..
MBRS360T3 ,Schottky Rectifiercontact. Ideally suited for low voltage, high frequency rectification, oras free wheeling and polar ..
MBRS360TR ,60V 3A Schottky Discrete Diode in a SMC packageapplications are in diskI Rectangular 3.0 A drives, switching power supplies, converters, free-whee ..
MBRS410ET3G , Surface Mount Schottky Power Rectifier
MC-222243AF9-B85X-BT3 ,MCP(32M-bit flash memory + 4M-bit Low Power SRAM)Features• Two bank organization enabling simultaneous execution of erase / program and read• Bank o ..
MC-222263F9-B85X-BT3 ,MCP(32M-bit flash memory + 8M-bit Low Power SRAM)Features• Two bank organization enabling simultaneous execution of erase / program and read• Bank o ..
MC-222263F9-B85X-BT3 ,MCP(32M-bit flash memory + 8M-bit Low Power SRAM)Features• Memory organization : 1,048,576 words × 8 bits (BYTE mode)524,288 words × 16 bits (WORD m ..
MC-222264F9-B85X-BT3 ,MCP(32M-bit flash memory + 8M-bit Low Power SRAM)Features• Two bank organization enabling simultaneous execution of erase / program and read• Bank o ..
MC2405 , C-BAND SOLID STATE POWER AMPLIFIERS
MC2405 , C-BAND SOLID STATE POWER AMPLIFIERS


MBRS340
Schottky Rectifier
MBRS340 MBRS340 Features • Compact surface mount with J-bend leads (SMC) • 3.0 Watt Power Dissipation package • 3.0 Ampere, forward voltage less than 500 mV SMC (D0-214AB) Color Band Denote Cathode Mark: B34 Schottky Rectifier Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value Units V Maximum Repetitive Reverse Voltage 40 V RRM I 3.0 A F(AV) Average Rectified Forward Current @ T = 100°C L 4.0 A T = 90 C ° L I Non-repetitive Peak Forward Surge Current 80 A FSM (Half wave, single phase, 60 Hz) T Storage Temperature Range -65 to +150 °C stg T Operating Junction Temperature -65 to +125 °C j *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units R Thermal Resistance, Junction to Lead 11 °C/W θJL Electrical Characteristics T = 25°C unless otherwise noted A Symbol Parameter Value Units V Forward Voltage @ I = 3.0A 525 mV F F I Reverse Current @ V = 40 V 2.0 mA R R 20 mA V = 40 V, T = 100 °C R A 2001 MBRS340, Rev. B
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