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MBRS130LTR
30V 1A Schottky Discrete Diode in a SMB package
Bulletin PD-20588 rev.D 03/03
International
113.23 Rectifier MBRS130LTR
SCHOTTKY RECTIFIER 1 Amp
1giiiiiiijt
Major Ratings and Characteristics Description/ Features
Characteristics MBRS130LTR Units The MBRS130LTR sur%ce-mount Schottky rectifier has been
designed for applications requiring low forward drop and small
IF A Rectangular 1.0 A foot prints on PC boards. Typical applications are in disk drives,
( V) waveform switching power supplies, converters, ftee-vvheeling diodes,
battery charging, and reverse battery protection.
VRRM 30 V
. Small foot print, surface mountable
- . Ve low forward volta e dro
IFSM @tp=5ys Slne 230 A . _ , p
. High frequency operation
V @1 OApk T =125°C 0 30 V . Guard ring for enhanced ruggedness and long term
F . ' J . . ...
reliability
T: range - 5510125 "C
Device Marking: IR13L CATHODEO -,ANODE
(.085):I:[ j 3.80 (.150) I: Ci) Ci) ,
(.071) 3.30 (.130)
4.70 (.185) CO POLARITY Ci) PART NUMBER
4.10 (.161)
25 TYP, SOLDERING PAD
2.40 (.094)
130 ( 051) 0.30 (.012) J
_ _ 0.15 (.006) 2.0 TYP. / F
0.76 (.030) 5.60 (.220) (.079 TYP.) 2 ( 165)
5.00 (.197) _ '
4.0 (.157)
Outline SMB
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
1
MBRS130LTR International
Bulletin PD-20588 rev.D 03/03 IEER Rectifier
Voltage Ratings
Part number MBRS130LTR
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters Value Units Conditions
IFW) Max.Average Forward Current 1.0 A 50% duty cyc|e@TL=106°C,rectangular waveform
IFSM Max.PeakOneCydeNon-Repetitive 230 A 5ps Sine orsps Rect. pulse Following any rated
Iqad condition and
Surge Current 40 10ms Sine or 6ms Rect. pulse with rated VRRM applied
EAS Non- Repetitive Avalanche Energy 3.0 mJ T_s=25''C,lAs=1A,L=6mH
I AR Repetitive Avalanche Current 1.0 A Current decaying linearlytozeroin1 usec
Frequencylimited by T, max.Va=1.5xVr typical
Electrical Specifications
Parameters Value Units Conditions
VFM Max. Forward Voltage Drop (1) 0.420 V @ 1A T, = 25 "C
0.470 V @ 2A
0.300 V @ 1A T, = 125 "C
0.370 V @ 2A
1 mA T J = 25 "C
IRS, Max. Reverse Leakage Current (1) 10 mA T: = 100 °C VR = rated VR
20 mA T: = 125 "C
c, Max. Junction Capacitance 200 pF VR = 51/oc (test signal range 100KHz to 1Mhz) 25°C
LS Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/ps
(Rated VR)
(1) Pulse Ndth < 300ps, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters Value Units Conditions
T J Max.Junction Temperature Range(*) -55 to 125 'C
Tstg Max. Storage Temperature Range -55 to 150 ''C
RthJL Max. Thermal Resistance 25 "C/W DC operation (See Fig.4)
Junction to Lead (**)
RthJA Max.ThermaI Resistance 80 "CAN DC operation
Junction to Ambient
wt Approximate Weight 0.10(0.003) g(oz.)
Case Style SMB Similarto DO-214AA
Device Marking IR13L
(*) dPtot < 1
de Rth(j-a)
(**) Mounted 1 inch square PCB
thermal runaway condition fora diode on its own heatsink
