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MBR2515L
SWITCHMODE⑩ Power Rectifier
MBR2515L
SWITCHMODE�
Power Rectifier
The MBR2515L employs the Schottky Barrier principle in a large
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for use in low voltage, high frequency
switching power supplies, low voltage converters, ORing diodes, and
polarity protection devices.
Features Pb−Free Package is Available* Very Low Forward Voltage (0.28 V Maximum @ 19 Amps, 70°C) Guardring for Stress Protection Highly Stable Oxide Passivated Junction
(100°C Operating Junction Temperature) Epoxy Meets UL 94, V−0 @ 0.125 in.
Mechanical Characteristics Case: Epoxy, Molded Weight: 1.9 grams (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MAXIMUM RATINGSMaximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
