| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| MBM29DL164BE-70PBT-JE1 |
SPANSION |
N/a |
9947 |
 |
|
MBM29DL164BE-70PFTN ,16M (2M x 8/1M x 16) BIT Dual OperationFUJITSU SEMICONDUCTORDS05-20874-4EDATA SHEETFLASH MEMORYCMOS16M (2M · 8/1M · 16) BIT Dual Operatio ..
MBM29DL164TE-70PFTN ,16M (2M x 8/1M x 16) BIT Dual OperationFEATURES• 0.33 m m Process Technology• Simultaneous Read/Write operations (dual bank)Multiple devic ..
MBM29DL322BD-90PFTN ,CMOS 32M (4M x 8/2M x16) bit dual operationFEATURES• 0.33 m m Process Technology• Simultaneous Read/Write operations (dual bank)Multiple devic ..
MBM29DL322BE90TN ,Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operationFUJITSU SEMICONDUCTORDS05-20881-3EDATA SHEETFLASH MEMORYCMOS32M (4M · 8/2M · 16) BIT Dual Operation ..
MBM29DL322TE-90TN ,32M (4M x 8/2M x 16) BIT Dual OperationFUJITSU SEMICONDUCTORDS05-20881-3EDATA SHEETFLASH MEMORYCMOS32M (4M · 8/2M · 16) BIT Dual Operation ..
MC143150B1FU1 ,V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 200mA; 800mW; bus interrupter moduleSECTION 6Neuron CHIP ELECTRICAL AND MECHANICAL SPECIFICATIONS6.1 INTRODUCTIONThe Neuron Chip proces ..
MC143416PB ,Dual 16-Bit Linear Codec-FilterMAXIMUM RATINGS (Voltages Referenced to DGND or AGND)This device contains protection circuitry toÁÁ ..
MC1436P1 ,High Voltage, Internally Compensated Operational AmplifiersELECTRICAL CHARACTERISTICS (V = +28 V, V = –28 V, T = 25°C, unless otherwise noted.)CC EE AMC1436 M ..
