Partno |
Mfg |
Dc |
Qty |
Available | Descript |
MB85431BC |
FUJI |
N/a |
334 |
|
|
MB85R1002 ,Memory FRAMFEATURES• Bit configuration : 65,536 words x 16 bits10 Read/write endurance : 10 times Operating ..
MB85R256G , 256K-bits FRAM LSI using the ferroelectric process and CMOS process technologies
MB85R256G , 256K-bits FRAM LSI using the ferroelectric process and CMOS process technologies
MB85RC16PNF-G-JNERE1 , Memory FRAM 16 K (2 K x 8) Bit I2C
MB85RC16PNF-G-JNERE1 , Memory FRAM 16 K (2 K x 8) Bit I2C
MC10111L ,Dual 3-Input/3-Output NOR GateLOGIC DIAGRAM DIPPIN ASSIGNMENT23546 V V1 16CC1 CC27A V2 1512 OUT CC113B9 A 3 14OUTOUT141011A 4 13 ..
MC10111P ,Dual 3-Input/3-Output NOR GateELECTRICAL CHARACTERISTICSTest LimitsPi Pin–30°C +25°C +85°CUnder UnderCharacteristic Symbol Test U ..
MC10111P ,Dual 3-Input/3-Output NOR GateLOGIC DIAGRAM DIPPIN ASSIGNMENT23546 V V1 16CC1 CC27A V2 1512 OUT CC113B9 A 3 14OUTOUT141011A 4 13 ..