Partno |
Mfg |
Dc |
Qty |
Available | Descript |
MB81V4260S-70L |
|
N/a |
86 |
|
|
MB8264A-10 , MOS 65536-BIT DYNAMIC RANDOM ACCESS MEMORY
MB8264A-10 , MOS 65536-BIT DYNAMIC RANDOM ACCESS MEMORY
MB8264A-10 , MOS 65536-BIT DYNAMIC RANDOM ACCESS MEMORY
MB82D01171A-80LLPBN , 16 Mbit (1 M word x 16 bit) Mobile Phone Application Specific Memory
MB82D01171A-80LLPBN , 16 Mbit (1 M word x 16 bit) Mobile Phone Application Specific Memory
MC100EP11DT ,3.3V / 5V ECL 1:2 Differential Fanout Buffer3MC10EP11, MC100EP11100EP DC CHARACTERISTICS, PECL V = 3.3 V, V = 0 V (Note 12)CC EE−40°C 25°C 85°C ..
MC100EP11DTR2G , 3.3V / 5V ECL 1:2 Differential Fanout Buffer
MC100EP131FA ,3.3V / 5V ECL Quad D Flip Flop with Set, Reset, and Differential Clock3MC10EP131, MC100EP13110EP DC CHARACTERISTICS, PECL V = 3.3 V, V = 0 V (Note 3)CC EE−40°C 25°C 85°C ..