| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| MB81V1MB8165B-60LPFTN |
FUJ |
N/a |
100 |
 |
|
MB8264A-10 , MOS 65536-BIT DYNAMIC RANDOM ACCESS MEMORY
MB8264A-10 , MOS 65536-BIT DYNAMIC RANDOM ACCESS MEMORY
MB8264A-10 , MOS 65536-BIT DYNAMIC RANDOM ACCESS MEMORY
MB82D01171A-80LLPBN , 16 Mbit (1 M word x 16 bit) Mobile Phone Application Specific Memory
MB82D01171A-80LLPBN , 16 Mbit (1 M word x 16 bit) Mobile Phone Application Specific Memory
MC100EP11DR2 ,3.3V / 5V ECL 1:2 Differential Fanout BufferAPPLICATION NOTEObjective Schematic InformationThe objective of this kit is to provide customers wi ..
MC100EP11DT ,3.3V / 5V ECL 1:2 Differential Fanout Buffer3MC10EP11, MC100EP11100EP DC CHARACTERISTICS, PECL V = 3.3 V, V = 0 V (Note 12)CC EE−40°C 25°C 85°C ..
MC100EP11DTR2G , 3.3V / 5V ECL 1:2 Differential Fanout Buffer
