| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| MAX5981AETE |
MAXIM|MAXIM - Dallas Semiconductor |
N/a |
2 |
 |
|
MAX5981AETE+ ,IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated Power MOSFETfeatures an LED driver that is auto-matically activated during sleep mode. During sleep PIN- SLEEP ..
MAX5981BETE+ ,IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated Power MOSFETELECTRICAL CHARACTERISTICS(V = (V - V ) = 48V, R = 24.9kω, R = 615ω, and R = 60.4kω. RTN, WAD, PG, ..
MAX5982AETE+ ,IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated 70W High-Power MOSFETFeaturesS Sleep Mode and Ultra-Low-Power Sleep The MAX5982A/MAX5982B/MAX5982C provide a com-(MAX598 ..
MAX5982BETE+ ,IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated 70W High-Power MOSFETApplicationsThe devices detect the presence of a wall adapter power IEEE 802.3af/at Powered Devices ..
MAX5984AETI+ ,Single-Port, 40W, IEEE 802.3af/at PSE Controller with Integrated MOSFETApplications)PoE Repeaters PSE OUTPUTSwitches/RoutersAGNDIndustrial Automation EquipmentV-54V EEOUT ..
MAZ8200G ,Silicon planar typeElectrical Characteristics T = 25°C±3°CaParameter Symbol Conditions Min Typ Max UnitForward voltag ..
MAZ8200G ,Silicon planar typeAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitRepetitive peak forward current I 20 ..
MAZ8200-H ,Silicon planar typeFeatures•Extremely low noise voltage caused from the diode (2.4V to 39V,1/3 to 1/10 of our conventi ..
