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MAX5062AASAMAXIMN/a2500avai125V/2A, high-speed, half-bridge MOSFET driver
MAX5062AASAMAXINN/a40avai125V/2A, high-speed, half-bridge MOSFET driver
MAX5062BASAMAXIMN/a2500avai125V/2A, high-speed, half-bridge MOSFET driver
MAX5063AASAMAXIMN/a2462avai125V/2A, high-speed, half-bridge MOSFET driver
MAX5063BASAMAXIMN/a2462avai125V/2A, high-speed, half-bridge MOSFET driver


MAX5062AASA ,125V/2A, high-speed, half-bridge MOSFET driverFeatures♦ HIP2100/HIP2101 Pin Compatible (MAX5062A/The MAX5062/MAX5063/MAX5064 high-frequency,125V ..
MAX5062AASA ,125V/2A, high-speed, half-bridge MOSFET driverApplicationsPIN- TOPPART TEMP RANGETelecom Half-Bridge Power SuppliesPACKAGE MARKTwo-Switch Forward ..
MAX5062AASA+T ,125V/2A, High-Speed, Half-Bridge MOSFET DriversELECTRICAL CHARACTERISTICS(V = V = +8V to +12.6V, V = GND = 0V, BBM = open, T = -40°C to +125°C, un ..
MAX5062BASA ,125V/2A, high-speed, half-bridge MOSFET driverapplications.♦ Up to 125V Input OperationThese drivers are independently controlled and their♦ 8V t ..
MAX5063AASA ,125V/2A, high-speed, half-bridge MOSFET driverMAX5062/MAX5063/MAX506419-3502; Rev 0; 11/04125V/2A, High-Speed, Half-Bridge MOSFET Drivers
MAX5063AASA+T ,125V/2A, High-Speed, Half-Bridge MOSFET DriversFeatures♦ HIP2100/HIP2101 Pin Compatible (MAX5062A/The MAX5062/MAX5063/MAX5064 high-frequency,125V ..
MAX9321BESA ,Differential PECL/ECL/LVPECL/LVECL Receiver/DriverApplicationsOrdering InformationPrecision Clock BufferPART TEMP RANGE PIN-PACKAGELow-Jitter Data Re ..
MAX9323EUP ,One-to-Four LVCMOS-to-LVPECL Output Clock and Data Driverfeatures low 150ps part-to-part skew, low♦ Consumes Only 25mA (max) Supply Current 11ps output-to-o ..
MAX9323EUP+ ,One-to-Four LVCMOS-to-LVPECL Output Clock and Data DriverELECTRICAL CHARACTERISTICS(V = 3.0V to 3.6V, outputs terminated with 50Ω ±1% to (V - 2V), CLK_SEL = ..
MAX9324EUP , One-to-Five LVPECL/LVCMOS Output Clock and Data Driver
MAX9324EUP+ ,One-to-Five LVPECL/LVCMOS Output Clock and Data DriverApplications*Future product—Contact factory for availability.**EP = Exposed paddle.Precision Clock ..
MAX9325EQI ,+2.375 V to +3.8 V, 2:8 differential LVPECL/LVECL/HSTL clock and data driverApplicationsFunctional Diagram appears at end of data sheet.Precision Clock DistributionLow-Jitter ..


MAX5062AASA-MAX5062BASA-MAX5063AASA-MAX5063BASA
125V/2A, high-speed, half-bridge MOSFET driver
General Description
The MAX5062/MAX5063/MAX5064 high-frequency,
125V half-bridge, n-channel MOSFET drivers drive high-
and low-side MOSFETs in high-voltage applications.
These drivers are independently controlled and their
35ns typical propagation delay, from input to output, are
matched to within 3ns (typ). The high-voltage operation
with very low and matched propagation delay between
drivers, and high source/sink current capabilities in a
thermally enhanced package make these devices suit-
able for the high-power, high-frequency telecom power
converters. The 125V maximum input voltage range pro-
vides plenty of margin over the 100V input transient
requirement of telecom standards. A reliable on-chip
bootstrap diode connected between VDDand BST elimi-
nates the need for an external discrete diode.
The MAX5062A/C and the MAX5063A/C offer both nonin-
verting drivers (see the Selector Guide). The
MAX5062B/D and the MAX5063B/D offer a noninverting
high-side driver and an inverting low-side driver. The
MAX5064A/B offer two inputs per driver that can be
either inverting or noninverting. The MAX5062A/B/C/D
and the MAX5064A feature CMOS (VDD / 2) logic inputs.
The MAX5063A/B/C/D and the MAX5064B feature TTL
logic inputs. The MAX5064A/B include a break-before-
make adjustment input that sets the dead time between
drivers from 16ns to 95ns. The drivers are available in the
industry-standard 8-pin SO footprint and pin configura-
tion, and a thermally enhanced 8-pin SO and 12-pin
(4mm x 4mm) thin QFN packages. All devices operate
over the -40°C to +125°C automotive temperature range.
Applications

Telecom Half-Bridge Power Supplies
Two-Switch Forward Converters
Full-Bridge Converters
Active-Clamp Forward Converters
Power-Supply Modules
Motor Control
Features
HIP2100/HIP2101 Pin Compatible (MAX5062A/
MAX5063A)
Up to 125V Input Operation8V to 13.2V VDDInput Voltage Range2A Peak Source and Sink Current Drive Capability35ns Typical Propagation DelayGuaranteed 8ns Propagation Delay Matching
Between Drivers
Programmable Break-Before-Make Timing
(MAX5064)
Up to 1MHz Combined Switching Frequency while
Driving 100nC Gate Charge (MAX5064)
Available in CMOS (VDD / 2) or TTL Logic-Level
Inputs with Hysteresis
Up to 15V Logic Inputs Independent of Input
Voltage
Low 2.5pF Input CapacitanceInstant Turn-Off of Drivers During Fault or PWM
Start-Stop Synchronization (MAX5064)
Low 200µA Supply CurrentVersions Available With Combination of
Noninverting and Inverting Drivers (MAX5062B/D
and MAX5063B/D)
Available in 8-Pin SO, Thermally Enhanced SO,
and 12-Pin Thin QFN Packages
MAX5062/MAX5063/MAX5064
125V/2A, High-Speed,
Half-Bridge MOSFET Drivers
Ordering Information
Selector Guide

19-3502; Rev 0; 11/04
*Future product—contact factory for availability.
**EP = Exposed paddle.
Ordering Information continued at end of data sheet.
MAX5062/MAX5063/MAX5064
125V/2A, High-Speed,
Half-Bridge MOSFET Drivers
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS

(VDD= VBST= +8V to +13.2V, VHS= GND = 0V, BBM = open, TA= -40°C to +125°C, unless otherwise noted. Typical values are at
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
(All voltages referenced to GND, unless otherwise noted.)
VDD, IN_H, IN_L, IN_L+, IN_L-, IN_H+, IN_H-........-0.3V to +15V
DL, BBM.....................................................-0.3V to (VDD+ 0.3V)
HS............................................................................-5V to +130V
DH to HS.....................................................-0.3V to (VDD+ 0.3V)
BST to HS...............................................................-0.3V to +15V
dV/dt at HS........................................................................50V/ns
Continuous Power Dissipation (TA= +70°C)
8-Pin SO (derate 5.9mW/°C above +70°C)...............470.6mW
8-Pin SO With Exposed Pad (derate 19.2mW/°C
above +70°C)......................................................1538.5mW
12-Pin Thin QFN (derate 24.4mW/°C
above +70°C)......................................................1951.2mW
Maximum Junction Temperature.....................................+150°C
Operating Temperature Range.........................-40°C to +125°C
Storage Temperature Range.............................-65°C to +150°C
Lead Temperature (soldering, 10s).................................+300°C
MAX5062/MAX5063/MAX5064
125V/2A, High-Speed,
Half-Bridge MOSFET Drivers
ELECTRICAL CHARACTERISTICS (continued)

(VDD= VBST= +8V to +13.2V, VHS= GND = 0V, BBM = open, TA= -40°C to +125°C, unless otherwise noted. Typical values are at
MAX5062/MAX5063/MAX5064
125V/2A, High-Speed,
Half-Bridge MOSFET Drivers
Note 1:
All devices are 100% tested at TA= +125°C. Limits over temperature are guaranteed by design.
Note 2:
Guaranteed by design, not production tested.
Note 3:
Break-before-make time is calculated by tBBM= 8ns x (1 + RBBM / 10kΩ).
ELECTRICAL CHARACTERISTICS (continued)

(VDD= VBST= +8V to +13.2V, VHS= GND = 0V, BBM = open, TA= -40°C to +125°C, unless otherwise noted. Typical values are at
MAX5062/MAX5063/MAX5064
125V/2A, High-Speed,
Half-Bridge MOSFET Drivers
Typical Operating Characteristics

(Typical values are at VDD= VBST= +12V and TA= +25°C, unless otherwise specified.)
MAX5062/MAX5063/MAX5064
125V/2A, High-Speed,
Half-Bridge MOSFET Drivers
Typical Operating Characteristics (continued)

(Typical values are at VDD= VBST= +12V and TA= +25°C, unless otherwise specified.)
MAX5062/MAX5063/MAX5064
125V/2A, High-Speed,
Half-Bridge MOSFET Driversypical Operating Characteristics (continued)

(Typical values are at VDD= VBST= +12V and TA= +25°C, unless otherwise specified.)
MAX5062/MAX5063/MAX5064
125V/2A, High-Speed,
Half-Bridge MOSFET Drivers
MAX5062/MAX5063/MAX5064
125V/2A, High-Speed,
Half-Bridge MOSFET Drivers
Detailed Description

The MAX5062/MAX5063/MAX5064 are 125V/2A high-
speed, half-bridge MOSFET drivers that operate from a
supply voltage of +8V to +13.2V. The drivers are
intended to drive a high-side switch without any isola-
tion device like an optocoupler or drive transformer.
The high-side driver is controlled by a TTL/CMOS logic
signal referenced to ground. The 2A source and sink
drive capability is achieved by using low RDS_ONp-
and n-channel driver output stages. The BiCMOS
process allows extremely fast rise/fall times and low
propagation delays. The typical propagation delay from
the logic-input signal to the drive output is 35ns with a
matched propagation delay of 3ns typical. Matching
these propagation delays is as important as the
absolute value of the delay itself. The high 125V input
voltage range allows plenty of margin above the 100V
transient specification per telecom standards.
The MAX5064 is available in a thermally enhanced
TQFN package, which can dissipate up to 1.95W (at
+70°C) and allow up to 1MHz switching frequency
while driving 100nC combined gate-charge MOSFETs.
Figure1. Timing Characteristics for Noninverting and Inverting Logic Inputs
MAX5062/MAX5063/MAX5064
Undervoltage Lockout

Both the high- and low-side drivers feature undervolt-
age lockout (UVLO). The low-side driver’s UVLOLOW
threshold is referenced to GND and pulls both driver
outputs low when VDDfalls below 6.8V. The high-side
driver has its own undervoltage lockout threshold
(UVLOHIGH), referenced to HS, and pulls DH low when
BST falls below 6.4V with respect to HS.
During turn-on, once VDDrises above its UVLO thresh-
old, DL starts switching and follows the IN_L logic input.
At this time, the bootstrap capacitor is not charged and
the BST-to-HS voltage is below UVLOBST. For synchro-
nous buck and half-bridge converter topologies, the
bootstrap capacitor can charge up in one cycle and
normal operation begins in a few microseconds after the
BST-to-HS voltage exceeds UVLOBST. In the two-switch
forward topology, the BST capacitor takes some time (a
few hundred microseconds) to charge and increase its
voltage above UVLOBST.
The typical hysteresis for both UVLO thresholds is 0.5V.
The bootstrap capacitor value should be selected care-
fully to avoid unintentional oscillations during turn-on
and turn-off at the DH output. Choose the capacitor
value about 20 times higher than the total gate capaci-
tance of the MOSFET. Use a low-ESR-type X7R dielec-
tric ceramic capacitor at BST (typically a 0.1µF ceramic
is adequate) and a parallel combination of 1µF and
0.1µF ceramic capacitors from VDDto GND
(MAX5062_, MAX5063_) or to PGND (MAX5064_). The
high-side MOSFET’s continuous on-time is limited due
to the charge loss from the high-side driver’s quiescent
current. The maximum on-time is dependent on the size
of CBST, IBST(50µA max), and UVLOBST.
Output Driver

The MAX5062/MAX5063/MAX5064 have low 2.5Ω
RDS_ONp-channel and n-channel devices (totem pole)
in the output stage. This allows for a fast turn-on and
turn-off of the high gate-charge switching MOSFETs.
The peak source and sink current is typically 2A.
Propagation delays from the logic inputs to the driver
outputs are matched to within 8ns. The internal p- and
n-channel MOSFETs have a 1ns break-before-make
logic to avoid any cross conduction between them. This
internal break-before-make logic eliminates shoot-
through currents reducing the operating supply current
as well as the spikes at VDD. The DL voltage is approxi-
mately equal to VDDand the DH-to-HS voltage, a diode
drop below VDD, when they are in a high state and to
zero when in a low state. The driver RDS_ONis lower at
higher VDD. Lower RDS_ONmeans higher source and
sink currents and faster switching speeds.
Internal Bootstrap Diode

An internal diode connects from VDDto BST and is
used in conjunction with a bootstrap capacitor external-
ly connected between BST and HS. The diode charges
the capacitor from VDDwhen the DL low-side switch is
on and isolates VDDwhen HS is pulled high as the high-
side driver turns on (see the Typical Operating Circuit).
The internal bootstrap diode has a typical forward volt-
age drop of 0.9V and has a 10ns typical turn-off/turn-on
time. For lower voltage drops from VDDto BST, connect
an external Schottky diode between VDDand BST.
Programmable Break-Before-Make
(MAX5064)

Half-bridge and synchronous buck topologies require
that the high- or low-side switch be turned off before
the other switch is turned on to avoid shoot-through
currents. Shoot-through occurs when both high- and
low-side switches are on at the same time. This condi-
tion is caused by the mismatch in the propagation
delay from IN_H/IN_L to DH/DL, driver output imped-
ance, and the MOSFET gate capacitance. Shoot-
through currents increase power dissipation, radiate
EMI, and can be catastrophic, especially with high
input voltages.
The MAX5064 offers a break-before-make (BBM) fea-
ture that allows the adjustment of the delay from the
input to the output of each driver. The propagation
delay from the rising edges of IN_H and IN_L to the ris-
ing edges of DH and DL, respectively, can be pro-
grammed from 16ns to 95ns. Note that the BBM time
(tBBM) has a higher percentage error at lower value
because of the fixed comparator delay in the BBM
block. The propagation delay mismatch (tMATCH_)
needs to be included when calculating the total tBBM
error. The low 8ns (maximum) delay mismatch reduces
the total tBBMvariation. Use the following equations to
calculate RBBMfor the required BBM time and
tBBM_ERROR:
where tBBMis in nanoseconds.
125V/2A, High-Speed,
Half-Bridge MOSFET Drivers
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