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MA80WA from PANASONIC, Panasonic 12000pcs , SOT-323,Small-signal device
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MA80WA PANASONIC N/a 12000
Electrical Characteristics T = 25°CaParameter Symbol Conditions Min Typ Max UnitReverse current (DC) I V = 33 V 0.01 100 nAR RForward voltage (DC) V I = 100 mA 0.92 1.0 VF FDiode capacitance C V = 6 V, f = 1 MHz 0.9 1.2 pFD R*Forward dynamic resistance r I = 2 mA, f = 100 MHz 0.65 0.85 Ωf FNote) 1. Each characteristic is a standard for individual diode2. Rated input/output frequency: 100 MHz3. : Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER*Note) The part number in the parenthesis shows conventional part number.Publication date: April 2002 SKG00013BED10 to 0.1 0.9±0.1 1.25±0.10 (0.425)+0.20.9–0.1 2.1±0.15˚0.2±0.1MA3X080D, MA3X080EI  V C  V I  TF F D R R a101 000 100T = 25°C f = 1 MHz V = 33 Va RT = 25°Ca5100103210 1 10.51 0.10.30.20.1 0.1 0.0104 8122 1602 2483 326400 0.2 0.4 0.6 0.8 1.0 0 20 40 60 80 100 120 140 160( )Forward voltage V (V) Reverse voltage V V Ambient temperature T (°C)F R ar  I r  ff F f1.01.0f = 100 MHzI = 2 mAFT = 25°Ca T = 25°CaΩΩ0.80.80.60.60.40.40.20.20011 3 0 30 10010 30 100 300 1 000Forward current I (mA)Frequency f (MHz)FSKG00013BED2( ) ( )Forward dynamic resistance r Forward current I mAf F( ) ( )Forward dynamic resistance r Diode capacitance C pFf D( )Reverse current I nARand material(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-ment if any of the products or technologies described in this material and controlled under the"Foreign Exchange and Foreign Trade Law" .(2) The technical information described in this material is limited to showing representative character-istics and applied circuit examples of the products. It does not constitute the warranting of industrialproperty, the granting of relative rights, or the granting of any license.(3)
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