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M74HCT7007M1RSTN/a21avaiHEX BUFFER
M74HCT7007RM13TRSTN/a1500avaiHEX BUFFER


M74HCT7007RM13TR ,HEX BUFFERM74HCT7007HEX BUFFER ■ HIGH SPEED: t = 14ns (TYP.) at V =4.5VPD CC■ LOW POWER DISSIPATION:I = 1μA( ..
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M74HCT7007M1R-M74HCT7007RM13TR
HEX BUFFER
1/8September 2001 HIGH SPEED:
tPD = 14ns (TYP.) at VCC=4.5V LOW POWER DISSIPATION:CC = 1μA(MAX.) at TA =25°C COMPATIBLE WITH TTL OUTPUTS : IH = 2V (MIN.) VIL = 0.8V (MAX) BALANCED PROPAGATION DELAYS:
tPLH ≅ tPHL SYMMETRICAL OUTPUT IMPEDANCE:
|IOH| = IOL = 4mA (MIN) PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 7007
DESCRIPTION

The M74HCT7007 is an high speed CMOS HEX
BUFFER fabricated with silicon gate C2 MOS
technology.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
The M74HCT7007 is designed to directly interface
HSC2 MOS systems with TTL and NMOS
components.
M74HCT7007

HEX BUFFER
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
M74HCT7007
2/8
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C
RECOMMENDED OPERATING CONDITIONS
M74HCT7007
3/8
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns)
CAPACITIVE CHARACTERISTICS

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/6 (per buffer)
M74HCT7007
4/8
TEST CIRCUIT

CL = 50pF or equivalent (includes jig and probe capacitance)
RT = ZOUT of pulse generator (typically 50Ω)
WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)


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