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M74HCT573M1RSTMN/a2950avaiOCTAL D-TYPE LATCH WITH 3 STATE OUTPUTS (NON INVERTING)
M74HCT573M1RSTN/a204avaiOCTAL D-TYPE LATCH WITH 3 STATE OUTPUTS (NON INVERTING)
M74HCT573RM13TRSTN/a10000avaiOCTAL D-TYPE LATCH WITH 3 STATE OUTPUTS (NON INVERTING)
M74HCT573TTRSTN/a10000avaiOCTAL D-TYPE LATCH WITH 3 STATE OUTPUTS (NON INVERTING)


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M74HCT573M1R-M74HCT573RM13TR-M74HCT573TTR
OCTAL D-TYPE LATCH WITH 3 STATE OUTPUTS (NON INVERTING)
1/11July 2001 HIGH SPEED:
tPD = 21ns (TYP.) at VCC = 4.5V LOW POWER DISSIPATION:CC = 4μA(MAX.) at TA =25°C COMPATIBLE WITH TTL OUTPUTS : IH = 2V (MIN.) VIL = 0.8V (MAX) BALANCED PROPAGATION DELAYS:
tPLH ≅ tPHL SYMMETRICAL OUTPUT IMPEDANCE:
|IOH| = IOL = 6mA (MIN) PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 573
DESCRIPTION

The M74HCT573 is an high speed CMOS OCTAL
LATCH WITH 3-STATE OUTPUTS fabricated
with silicon gate C2 MOS technology.
This 8-BIT D-Type latches is controlled by a latch
enable input (LE) and output enable input (OE).
While the LE input is held at a high level, the Q
outputs will follow the data input precisely. When
the LE is taken low, the Q outputs will be latched
precisely at the logic level of D input data.
While the OE input is at low level, the eight outputs
will be in a normal logic state (high or low logic
level) and while OE is at high level the outputs will
be in a high impedance state.
The 3-State output configuration and the wide
choice of outline make bus organized system
simple.
The M74HCT573 is designed to directly interface
HSC2 MOS systems with TTL and NMOS
components.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
M74HCT573

OCTAL D-TYPE LATCH
WITH 3 STATE OUTPUT NON INVERTING
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
M74HCT573
2/11
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE

X: Don’t Care
Z: High Impedance
(*): Q Outputs are latched at the time when the LE input is taken low logic level.
LOGIC DIAGRAM
M74HCT573
3/11
ABSOLUTE MAXIMUM RATINGS

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C
RECOMMENDED OPERATING CONDITIONS
M74HCT573
4/11
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (C
L = 50 pF, Input tr = tf = 6ns)
M74HCT573
5/11
CAPACITIVE CHARACTERISTICS

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/8 (per Flip
Flop)
TEST CIRCUIT

CL = 50pF/150pF or equivalent (includes jig and probe capacitance)
R1 = 1KΩ or equivalent
RT = ZOUT of pulse generator (typically 50Ω)
M74HCT573
6/11
WAVEFORM 1: LE TO Qn PROPAGATION DELAYS, LE MINIMUM PULSE WIDTH, Dn TO LE SETUP
AND HOLD TIMES (f=1MHz; 50% duty cycle)
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