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M74HCT14B1STN/a31avaiHEX SCHMITT INVERTER


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M74HCT14B1
HEX SCHMITT INVERTER
1/8July 2001 HIGH SPEED:
tPD = 19ns (TYP.) at VCC = 4.5V LOW POWER DISSIPATION:
ICC = 1μA(MAX.) at TA=25°C HIGH NOISE IMMUNITY :
VH = 0.7V (TYP) at Vcc = 4.5V BALANCED PROPAGATION DELAYS:
tPLH ≅ tPHL SYMMETRICAL OUTPUT IMPEDANCE:
|IOH| = IOL = 4mA (MIN) PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 14
DESCRIPTION

The M74HCT14 is an high speed CMOS HEX
SCHMITT INVERTER fabricated with silicon gate2 MOS technology.
Pin configuration and function are the same as
those of the M74HCT04 but all inputs have 0.7 V
hysteresis level. This together with its schmitt
trigger function allows it to be used on line receiver
with slow rise/fall input signals.
The M74HCT14 is designed to directly interface
HSC2 MOS systems with TTL and NMOS
components.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
M74HCT14

HEX SCHMITT INVERTER
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
M74HCT14
2/8
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C
RECOMMENDED OPERATING CONDITIONS
M74HCT14
3/8
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (C
L = 50 pF, Input tr = tf = 6ns)
CAPACITIVE CHARACTERISTICS

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC
M74HCT14
4/8
TEST CIRCUIT

CL = 50pF or equivalent (includes jig and probe capacitance)
RT = ZOUT of pulse generator (typically 50Ω)
WAVEFORM 1: PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)


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