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M74HC670M1RSTN/a2000avai4 WORD X 4 BIT REGISTER FILE (3 STATE)
M74HC670RM13TRSTMN/a2043avai4 WORD X 4 BIT REGISTER FILE (3 STATE)


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M74HC670M1R-M74HC670RM13TR
4 WORD X 4 BIT REGISTER FILE (3 STATE)
1/11August 2001 HIGH SPEED :
tPD = 22 ns (TYP.) at VCC = 6V LOW POWER DISSIPATION:
ICC =4μA(MAX.) at TA=25°C HIGH NOISE IMMUNITY:NIH = VNIL = 28 % VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE:OH | = IOL = 4mA (MIN) BALANCED PROPAGATION DELAYS: PLH ≅ t PHL WIDE OPERATING VOLTAGE RANGE:
VCC (OPR) = 2V to 6V PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 670
DESCRIPTION

The M74HC670 is an high speed CMOS 4-
WORD x 4 BIT REGISTER FILE (3 STATE)
fabricated with silicon gate C2 MOS technology.
The M74HC670 is 4 x 4 Register File organized as
four words by four bits. Separate read and write
inputs, both address and enable, allow
simultaneous read and write operation. The
3-state outputs make it possible to connect up to
128 outputs to increase the word capacity up to
512 words. Any number of these devices can be
operated in parallel to generate an n-bit length.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
M74HC670

4 WORD x 4 BIT REGISTER FILE (3 STATE)
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
M74HC670
2/11
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
WRITE FUNCTION TABLE
READ FUNCTION TABLE

X : Don’t Care
Z : High Impedance
(Q = D) = The four select internal flip-flop outputs will assume the states applied to the four external data inputs.
Q0 = The level of Q before the indicated input conditions were established.
W0B1 = The firs bit of word 0, etc.
M74HC670
3/11
LOGIC DIAGRAM

This logic diagram has not be used to estimate propagation delays
ABSOLUTE MAXIMUM RATINGS

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C
M74HC670
4/11
RECOMMENDED OPERATING CONDITIONS
DC SPECIFICATIONS
M74HC670
5/11
AC ELECTRICAL CHARACTERISTICS (C
L = 50 pF, Input tr = tf = 6ns)
CAPACITIVE CHARACTERISTICS

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC
M74HC670
6/11
TEST CIRCUIT

CL = 50pF/150pF or equivalent (includes jig and probe capacitance)
R1 = 1KΩ or equivalent
RT = ZOUT of pulse generator (typically 50Ω)
WAVEFORM 1 : PROPAGATION DELAY, MINIMUM PULSE WIDTH, SETUP AND HOLD TIME,
MINIMUM LATCH TIME (f=1MHz; 50% duty cycle)
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