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M68AW127BM70C6 ST|ST Microelectronics N/a 40



M68AW127BM70MC6T ,1 MBIT (128K X8), 3.0V ASYNCHRONOUS SRAMfeatures fully static operation requiring no when deselected.external clocks or timing strobes, wit ..
M68AW127BM70MC6U ,1 MBIT (128K X8), 3.0V ASYNCHRONOUS SRAMAbsolute Maximum Ratings 8DC AND AC PARAMETERS . . 9Table 4. Operating and AC Measuremen ..
M68AW127BM70N6 ,1 MBIT (128K X8), 3.0V ASYNCHRONOUS SRAMFEATURES SUMMARY■ SUPPLY VOLTAGE: 2.7 to 3.6V Figure 1. Packages■ 128K x 8 bits SRAM with OUTPUT EN ..
M68AW127BM70NK6 ,1 MBIT (128K X8), 3.0V ASYNCHRONOUS SRAMBlock Diagram . . 6OPERATION . . . . . . 7Read Mode . . . . 7Write Mode ..
M68AW127BM70NK6T ,1Mbit 128K x8, 3.0V Asynchronous SRAMLogic Diagram . . 4Table 1. Signal Names . . 4Figure 3. SO Connections . 5Figur ..
MAX1092BCEG ,400ksps / +5V / 8-/4-Channel / 10-Bit ADCs with +2.5V Reference and Parallel Interfaceapplications or for other circuits withdemanding power consumption and space require- Pin Configura ..
MAX1092BEEG ,400ksps / +5V / 8-/4-Channel / 10-Bit ADCs with +2.5V Reference and Parallel InterfaceELECTRICAL CHARACTERISTICS(V = V = +5V ±10%, COM = GND, REFADJ = V , V = +2.5V, 4.7µF capacitor at ..
MAX1092BEEG+ ,400ksps, +5V, 8-/4-Channel, 10-Bit ADCs with +2.5V Reference and Parallel InterfaceELECTRICAL CHARACTERISTICS(V = V = +5V ±10%, COM = GND, REFADJ = V , V = +2.5V, 4.7µF capacitor at ..
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