| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| M5M4V4400CTP |
|
N/a |
27 |
 |
|
| M5M4V4400CTP |
MITSUBISHI |
N/a |
100 |
|
|
| M5M4V4400CTP |
MITS |
N/a |
18 |
|
|
| M5M4V4400CTP |
MIT |
N/a |
218 |
|
|
M5M4V64S30ATP-10 , 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S40ATP-10L , 64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
M5M51008BFP , 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
M5M51008BFP-70VLL , 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
M5M51008BVP-12VLL , 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
MA2S111 ,Small-signal deviceElectrical Characteristics T = 25°CaParameter Symbol Conditions Min Typ Max UnitReverse current (D ..
MA2S111 ,Small-signal deviceapplications intended.(4) The products and product specifications described in this material are su ..
MA2S331 ,Small-signal deviceElectrical Characteristics T = 25°CaParameter Symbol Conditions Min Typ Max UnitReverse current (D ..
