Partno |
Mfg |
Dc |
Qty |
Available | Descript |
M5M4257AP-12 |
MIT |
N/a |
25 |
|
|
M5M4416P-12 , 65,536-BIT (16,384-WORD BY 4-BIT) DYNAMIC RAM
M5M44260CJ-5 , FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
M5M44260CJ-5S , FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
M5M44260CJ-6S , FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
M5M44260CJ-7S , FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
MA1Z470 ,Small-signal deviceelectrical characteristicsReverse current I V Specified value within part numbers µ AR R3*Temperatu ..
MA1Z510 ,Small-signal deviceFeatures•Large power dissipation: P = 1 WD•Zener voltage V : 4.7 V to 51 VZ•Zener voltage allowable ..
MA21D35 ,Silicon epitaxial planar typeElectrical Characteristics T = 25°C±3°CaParameter Symbol Conditions Min Typ Max UnitV I = 0.7 A0.4 ..