| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| M5M2168P |
MI |
N/a |
25 |
 |
|
M5M27C202JK-10 , 2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
M5M27C202JK-12 , 2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
M5M27C202JK-12 , 2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
M5M27C202JK-15 , 2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
M5M28F101AFP , 1048576-BIT (131072-WORD BY 8-BIT) CMOS FLASH MEMORY
MA124 ,Small-signal deviceElectrical Characteristics T = 25°CaParameter Symbol Conditions Min Typ Max UnitReverse current (D ..
MA125 ,Small-signal deviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitReverse voltage (DC) V 40 V 0.1 to 0 ..
MA126 ,Low G Micromachined AccelerometerAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit0.1 to 0.3Reverse voltage (DC) V 80 ..
