M54HC08K1 ,RAD-HARD QUAD 2-INPUT AND GATEM54HC08RAD-HARD QUAD 2-INPUT AND GATE
M54HC08K1
RAD-HARD QUAD 2-INPUT AND GATE
1/8March 2004 HIGH SPEED:
tPD= 7ns (TYP.)at VCC =6V LOW POWER DISSIPATION:CC =1μA(MAX.)atTA =25°C HIGH NOISE IMMUNITY:NIH =VNIL= 28%VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE:
|IOH|= IOL =4mA (MIN) BALANCED PROPAGATION DELAYS:
tPLH≅ tPHL WIDE OPERATING VOLTAGE RANGE:CC (OPR)= 2Vto 6V PIN AND FUNCTION COMPATIBLE WITH SERIES08 SPACE GRADE-1: ESA SCC QUALIFIED 50 krad QUALIFIED, 100 krad AVAILABLE ON
REQUEST NO SEL UNDER HIGH LET HEAVY IONS
IRRADIATION DEVICE FULLY COMPLIANT WITH
SCC-9201-106
DESCRIPTIONThe M54HC08is anhighspeed CMOS QUAD
2-INPUT AND GATE fabricated with silicon gate2 MOS technology.
The internal circuitis composed of2 stages
including buffer output, which enables high noise
immunity and stable output.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
M54HC08RAD-HARD QUAD 2-INPUT AND GATE
PIN CONNECTION
ORDER CODES
M54HC082/8
IEC LOGIC SYMBOLS
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGSAbsoluteMaximum Ratingsare those values beyond which damagetothe device mayoccur.Functional operation under these conditionsis
not implied
M54HC083/8
RECOMMENDED OPERATING CONDITIONS SPECIFICATIONS
M54HC084/8
ELECTRICAL CHARACTERISTICS(CL=50 pF, Inputtr=tf =6ns)
CAPACITIVE CHARACTERISTICS CPD isdefinedasthe valueofthe IC’s internal equivalent capacitance whichis calculatedfrom theoperating current consumption without
load.(Referto Test Circuit). Averageoperatingcurrentcan beobtained bythefollowingequation. ICC(opr) =CPD xVCC xfIN +ICC/4 (per gate)
TEST CIRCUIT= 50pFor equivalent (includesjig and probe capacitance) =ZOUTof pulse generator (typically 50Ω)
M54HC085/8
WAVEFORM: PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)
