Partno |
Mfg |
Dc |
Qty |
Available | Descript |
M28F102-90K3 |
ST|ST Microelectronics |
N/a |
2000 |
|
|
M28F256-10C1TR ,512 Kbit (64Kb x8 Bulk Erase)Flasxh Memoryapplications where the memory has to be repro-
grammed in the equipment. The access time of
100ns ..
M28F256-10C3TR ,512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory"1ab--2c;
dfi, f,iiiiltiils'ltillll!iiil!l! M28F256
256K (32K x 8, Chip Erase) FLASH MEMORY
..
M28F256-12C1TR ,512 Kbit (64Kb x8 Bulk Erase)Flasxh MemoryLogic Diagram
DESCRIPTION
The M28F256 FLASH Memory Is a non-volatile
memory which may be era ..
M28F256-12C3TR ,512 Kbit (64Kb x8 Bulk Erase)Flasxh MemoryLogic Diagram
DESCRIPTION
The M28F256 FLASH Memory Is a non-volatile
memory which may be era ..
M28F256-15C1TR ,512 Kbit (64Kb x8 Bulk Erase)Flasxh MemoryAbsolute Maximum Ratings
Parameter
'r'r"1Tv.rrn..F.rr..L
Am bient Operating Temperature m
..
M4N26 ,6-Pin DIP Optoisolators Transistor Output
M4N37 ,6-Pin DIP Optoisolators Transistor Output
M4T28-BR12SH ,TIMEKEEPER SNAPHAT Battery & CrystalAbsolute Maximum Ratings . 7DC and AC PARAMETERS . . 8Table 3. DC and AC Measurement Co ..