| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| M28F101-90KJ |
ST|ST Microelectronics |
N/a |
24 |
 |
|
M28F101-90N1 ,1 Mb 128K x 8/ Chip Erase FLASH MEMORYLogic Diagramchip level and programmed byte-by-byte. It is or-ganisedas 128K bytes of 8 bits.It use ..
M28F256-10C1TR ,512 Kbit (64Kb x8 Bulk Erase)Flasxh Memoryapplications where the memory has to be repro-
grammed in the equipment. The access time of
100ns ..
M28F256-10C3TR ,512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory"1ab--2c;
dfi, f,iiiiltiils'ltillll!iiil!l! M28F256
256K (32K x 8, Chip Erase) FLASH MEMORY
..
M28F256-12C1TR ,512 Kbit (64Kb x8 Bulk Erase)Flasxh MemoryLogic Diagram
DESCRIPTION
The M28F256 FLASH Memory Is a non-volatile
memory which may be era ..
M28F256-12C3TR ,512 Kbit (64Kb x8 Bulk Erase)Flasxh MemoryLogic Diagram
DESCRIPTION
The M28F256 FLASH Memory Is a non-volatile
memory which may be era ..
M4N26 ,6-Pin DIP Optoisolators Transistor Output
M4N37 ,6-Pin DIP Optoisolators Transistor Output
M4T28-BR12SH ,TIMEKEEPER SNAPHAT Battery & CrystalAbsolute Maximum Ratings . 7DC and AC PARAMETERS . . 8Table 3. DC and AC Measurement Co ..
