| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| M28F101-150PI |
ST|ST Microelectronics |
N/a |
5380 |
 |
|
M28F101-200K1 ,1 Mb 128K x 8/ Chip Erase FLASH MEMORYLogic Diagramchip level and programmed byte-by-byte. It is or-ganisedas 128K bytes of 8 bits.It use ..
M28F101-200K6 ,1 Mb 128K x 8/ Chip Erase FLASH MEMORYapplications where the memory has to be repro-V VCC PPgrammed in the equipment. The access time of7 ..
M28F101-90K1 ,1 Mb 128K x 8/ Chip Erase FLASH MEMORYAbsolute Maximum RatingsSymbol Parameter Value UnitT Ambient Operating Temperature –40 to 125 °CATS ..
M28F101-90K3 ,1 Mb 128K x 8/ Chip Erase FLASH MEMORYapplications where the memory has to be repro-V VCC PPgrammed in the equipment. The access time of7 ..
M28F101-90K6 ,1 Mb 128K x 8/ Chip Erase FLASH MEMORYM28F1011 Mb (128K x 8, Chip Erase) FLASH MEMORY5V ±10% SUPPLY VOLTAGE12V PROGRAMMING VOLTAGEFAST AC ..
M4N26 ,6-Pin DIP Optoisolators Transistor Output
M4N37 ,6-Pin DIP Optoisolators Transistor Output
M4T28-BR12SH ,TIMEKEEPER SNAPHAT Battery & CrystalAbsolute Maximum Ratings . 7DC and AC PARAMETERS . . 8Table 3. DC and AC Measurement Co ..
