Partno |
Mfg |
Dc |
Qty |
Available | Descript |
LTE283QV-F01.10400PSC |
SAMSUNG |
N/a |
5000 |
|
|
LTE-302 ,On Technology Corporation - SELECTED TO SPECIFIC ON-LIVE INTENSITY AND RADIANT INTENSITY RANGES
LTE-306 ,On Technology Corporation - Property of Lite-On Only
LTE-309 ,On Technology Corporation - Property of LITE-ON Only
LTE-3271T ,On Technology Corporation - GaAlAs T-1 3/4 Standard 5 Infrared Emitting Diode
LTE-3271TL ,On Technology Corporation - GaAlAs T-1 3/4 Standard 5 Infrared Emitting Diode
M25P64VME6 ,64 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus InterfaceBlock Diagram . 11Table 3. Memory Organization . . .12INSTRUCTIONS . . 14Table ..
M25P64-VME6G ,64Mbit, Low Voltage, Serial Flash Memory With 50 MHz SPI Bus InterfaceBlock Diagram . 11Table 3. Memory Organization . . .12INSTRUCTIONS . . 14Table ..
M25P64-VME6P ,64 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus InterfaceAbsolute Maximum Ratings . . . . . . . 28DC AND AC PARAMETERS . 29Table 10. Operating Con ..