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LM5110-1M |LM51101MNSN/a300avaiDual 5A Compound Gate Driver with Negative Output Voltage Capability
LM5110-1MX |LM51101MXNSN/a1803avaiDual 5A Compound Gate Driver with Negative Output Voltage Capability
LM5110-1SD |LM51101SDNSN/a1118avaiDual 5A Compound Gate Driver with Negative Output Voltage Capability
LM5110-2M |LM51102MNSN/a85avaiDual 5A Compound Gate Driver with Negative Output Voltage Capability
LM5110-2MX |LM51102MXNSN/a468avaiDual 5A Compound Gate Driver with Negative Output Voltage Capability
LM5110-2SD |LM51102SDNSCN/a70avaiDual 5A Compound Gate Driver with Negative Output Voltage Capability
LM5110-3M |LM51103MNSN/a5700avaiDual 5A Compound Gate Driver with Negative Output Voltage Capability
LM5110-3SD |LM51103SDNSCN/a200avaiDual 5A Compound Gate Driver with Negative Output Voltage Capability
LM5110-3SD |LM51103SDNSN/a195avaiDual 5A Compound Gate Driver with Negative Output Voltage Capability


LM5110-3M ,Dual 5A Compound Gate Driver with Negative Output Voltage CapabilityFeaturesn SOIC-8n Independently drives two N-Channel MOSFETsn LLP-10 (4 mmx4mm)n Compound CMOS and ..
LM5110-3SD ,Dual 5A Compound Gate Driver with Negative Output Voltage CapabilityGeneral Descriptionn Two channels can be connected in parallel to double theThe LM5110 Dual Gate Dr ..
LM5110-3SD ,Dual 5A Compound Gate Driver with Negative Output Voltage CapabilityLM5110 Dual 5A Compound Gate Driver with Negative Output Voltage CapabilityOctober 2003LM5110Dual 5 ..
LM5111-1M ,Dual 5A Compound Gate DriverGeneral Descriptionn Fast propagation times (25 ns typical)The LM5111 Dual Gate Driver replaces ind ..
LM5111-1M/NOPB ,Dual 5A Compound Gate Driver 8-SOIC -40 to 125 SNVS300H–JULY 2004–REVISED SEPTEMBER 20165 Device OptionsTable 1. Configuration TablePART NUMBER " ..
LM5111-1MX ,Dual 5A Compound Gate DriverApplicationsdoublethedrivecurrentcapability.Thisdeviceisavailableinn Synchronous Rectifier Gate Dri ..
LP2989IMX-1.8 ,Micropower 500 mA Low Noise Low-Dropout Regulator for Applications with Output Voltages < 2VLP2989IMX-2.5 ,Micropower/Low Noise, 500 mA Ultra Low-Dropout RegulatorLP2989 Micropower/Low Noise, 500 mA Ultra Low-Dropout RegulatorFor Use with Ceramic Output Capacito ..
LP2989IMX-3.3 ,Micropower/Low Noise, 500 mA Ultra Low-Dropout RegulatorApplicationsError Flag: The built-in error flag goes low when the outputdrops approximately 5% belo ..
LP2989IMX-5.0 ,Micropower/Low Noise, 500 mA Ultra Low-Dropout RegulatorLP2989 Micropower/Low Noise, 500 mA Ultra Low-Dropout RegulatorFor Use with Ceramic Output Capacito ..
LP2992AILD-1.8 ,Micropower 250 mA Low-Noise Ultra Low-Dropout Regulator in SOT-23 and LLP Packagesapplications.n Smallest possible size (SOT-23, LLP package)™Using an optimized VIP (Vertically Inte ..
LP2992AILD-1.8 ,Micropower 250 mA Low-Noise Ultra Low-Dropout Regulator in SOT-23 and LLP PackagesFeaturesn Ultra low dropout voltageThe LP2992 is a 250 mA, fixed-output voltage regulatordesigned t ..


LM5110-1M-LM5110-1MX-LM5110-1SD-LM5110-2M-LM5110-2MX-LM5110-2SD-LM5110-3M-LM5110-3SD
Dual 5A Compound Gate Driver with Negative Output Voltage Capability
LM5110
Dual 5A Compound Gate Driver with Negative Output
Voltage Capability
General Description

The LM5110 Dual Gate Driver replaces industry standard
gate drivers with improved peak output current and effi-
ciency. Each “compound” output driver stage includes MOS
and bipolar transistors operatingin parallel that together sink
more than5A peak from capacitive loads. Combining the
unique characteristicsof MOS and bipolar devices reduces
drive current variation with voltage and temperature. Sepa-
rate input and output ground pins provide Negative Drive
Capability allowing the userto drive MOSFET gates with
positive and negative VGS voltages. The gate driver control
inputs are referencedtoa dedicated input ground (IN_REF).
The gate driver outputs swing from VCCtothe output ground
VEE which canbe negative with respectto IN_REF. The
abilityto hold MOSFET gatesoff witha negative VGS volt-
age reduces losses when driving low threshold voltage
MOSFETs often usedas synchronous rectifiers. When driv-
ing with conventional positive only gate voltage,the IN_REF
and VEE pins are connected together and referencedtoa
common ground. Under-voltage lockout protection anda
shutdown input pin are also provided. The drivers canbe
operatedin parallel with inputs and outputs connectedto
doublethe drive current capability. This deviceis availablein
the SOIC-8 andthe thermally-enhanced LLP-10 packages.
Features
Independently drives two N-Channel MOSFETs Compound CMOS and bipolar outputs reduce output
current variation5A sink/3A source current capability Two channels canbe connectedin parallelto doublethe
drive current Independent inputs (TTL compatible) Fast propagation times (25ns typical) Fast rise andfall times (14 ns/12ns rise/fall with2nF
load) Dedicated input groundpin (IN_REF)for split supplyor
single supply operation Outputs swing from VCCto VEE which canbe negative
relativeto input ground Availablein dual non-inverting, dual inverting and
combination configurations Shutdown input provides low power mode Supplyrail under-voltage lockout protection Pin-out compatible with industry standard gate drivers
Typical Applications
Synchronous Rectifier Gate Drivers Switch-mode Power Supply Gate Driver Solenoid and Motor Drivers Power Level Shifter
Package
SOIC-8 LLP-10(4 mmx4mm)
Ordering Information
Order Number Package Type NSC Package Drawing SuppliedAs

LM5110-1/2/3M SOIC-8 M08A Shippedin anti-static units
LM5110-1/2/3 MX SOIC-8 M08A 2500 shippedin Tape& Reel
LM5110-1/2/3SD LLP-10 SDC10A 1000 shippedin Tape& Reel
LM5110-1/2/3 SDX LLP-10 SDC10A 4500 shippedin Tape& Reel
October 2003
LM51
Dual
Compound
Gate
Driver
with
Negative
Output
oltage
Capability
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