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LM5110-1MX/NOPB |LM51101MXNOPBNSN/a1080avaiDual 5A Compound Gate Driver with Negative Output Voltage Capability 8-SOIC -40 to 125
LM5110-2MX/NOPB |LM51102MXNOPBNSCN/a95000avaiDual 5A Compound Gate Driver with Negative Output Voltage Capability 8-SOIC -40 to 125


LM5110-2MX/NOPB ,Dual 5A Compound Gate Driver with Negative Output Voltage Capability 8-SOIC -40 to 125 SNVS255B–MAY 2004–REVISED SEPTEMBER 20165 Device OptionsTable 1. Configuration TablePART NUMBER “A ..
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LM5110-1MX/NOPB-LM5110-2MX/NOPB
Dual 5A Compound Gate Driver with Negative Output Voltage Capability
LM5110
IN_REF
IN_A
IN_B
VEE
SHDN
OUT_A
OUT_B
VCC
1.0F
INA
0.1F
INB
0.1F±+±VNEG
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LM5110

SNVS255B –MAY 2004–REVISED SEPTEMBER 2016
LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability Features
Independently Drives Two N-Channel MOSFETs Compound CMOS and Bipolar Outputs Reduce
Output Current Variation 5A sink/3A Source Current Capability Two Channels canbe Connectedin Parallelto
Double the Drive Current Independent Inputs (TTL Compatible) Fast Propagation Times (25-ns Typical) Fast Rise and Fall Times (14-ns/12-ns Rise/Fall
With 2-nF Load) Dedicated Input Ground Pin (IN_REF)for Split
Supplyor Single Supply Operation Outputs Swing from VCCto VEE Which Can Be
Negative Relativeto Input Ground Availablein Dual Noninverting, Dual Inverting and
Combination Configurations Shutdown Input Provides Low Power Mode Supply Rail Undervoltage Lockout Protection Pin-Out Compatible With Industry Standard Gate
Drivers Packages: SOIC-8 WSON-10(4 mm×4 mm) Applications Synchronous Rectifier Gate Drivers Switch-Mode Power Supply Gate Driver Solenoid and Motor Drivers Description
The LM5110 Dual Gate Driver replaces industry
standard gate drivers with improved peak output
current and efficiency. Each “compound” output driver
stage includes MOS and bipolar transistors operating parallel that together sink more than 5A peak from
capacitive loads. Combining the unique
characteristicsof MOS and bipolar devices reduces
drive current variation with voltage and temperature.
Separate input and output ground pins provide
Negative Drive Capability allowing the userto drive
MOSFET gates with positive and negative VGS
voltages. The gate driver control inputs are
referenced toa dedicated input ground (IN_REF).
The gate driver outputs swing from VCCto the output
ground VEE which can be negative with respectto
IN_REF. Undervoltage lockout protection anda
shutdown input pin are also provided. The drivers can operated in parallel with inputs and outputs
connectedto double the drive current capability. This
deviceis availablein the SOIC-8 and the thermally-
enhanced WSON-10 packages.
Device Information(1)

(1) Forall available packages, see the orderable addendumat
the endofthe data sheet.
Simplified Application Diagram
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