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LM3045J-LM3046N-LM3086N
LM3045/LM3046/LM3086 Transistor Arrays
TL/H/7950
LM3045/LM3046/LM3086
Transistor
Arrays
December 1994
LM3045/LM3046/LM3086 Transistor Arrays
General Description
The LM3045, LM3046 and LM3086 each consistoffive
general purpose silicon NPN transistorsona common
monolithic substrate. Twoofthe transistorsare internally
connectedto forma differentially-connected pair. The tran-
sistorsarewell suitedtoa widevarietyof applicationsinlow
power systemintheDC through VHF range. They maybe
usedas discrete transistorsin conventional circuits howev-
er,in addition, theyprovidethe very significant inherent inte-
grated circuit advantagesof close electrical and thermal
matching. The LM3045is suppliedina 14-lead cavity dual-
in-line package ratedfor operation overthe fullmilitary tem-
perature range. The LM3046 and LM3086are electrically
identicaltothe LM3045butare suppliedina 14-lead mold- dual-in-line packagefor applications requiring onlyalim-
ited temperature range.
Features Two matched pairsof transistors
VBE matched g5mV
Input offset current2mA maxatICe 1mA Five general purpose monolithic transistors Operation fromDCto120 MHz Wide operating current range Low noise figure 3.2dBtypat1 kHz Full military
temperature range (LM3045) b55§Cto a125§C
Applications General useinall typesof signal processing systems
operating anywhereinthe frequency range fromDCto
VHF Custom designed differential amplifiers Temperature compensated amplifiers
Schematic and Connection Diagram
Dual-In-Lineand Small Outline Packages
TL/H/7950–1
Top View
Order Number LM3045J, LM3046M, LM3046NorLM3086N
See NSPackageNumber J14A, M14Aor N14A
C1995National SemiconductorCorporation RRD-B30M115/PrintedinU.S.A.
