| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| LL15XB60-7000 |
SHINDENGEN |
N/a |
1998 |
 |
|
LL1608-FH1N2S , Heterojunction Bipolar Transistor Technology (InGaP HBT)
LL1608-FH1N2S , Heterojunction Bipolar Transistor Technology (InGaP HBT)
LL1608-FH1N2S , Heterojunction Bipolar Transistor Technology (InGaP HBT)
LL1608-FH1N5S , Multilayer Chip Inductors
LL1608-FH1N5S , Multilayer Chip Inductors
LM336Z ,2.5V VOLTAGE REFERENCESABSOLUTE MAXIMUM RATINGSSymbol Parameter LM236 LM336,B UnitCurrent mAI Reverse 15 15RI Forward 10 1 ..
LM336Z ,2.5V VOLTAGE REFERENCESELECTRICAL CHARACTERISTICSo oLM236 -25 C ≤ T ≤ +85 Cambo oLM336,B 0 C ≤ Tamb ≤ +70 C(unless other ..
LM336Z-2.5 ,2.5V, 2.5% Tolerance Shunt RegulatorLM336-2.5/LM336B-2.5Programmable Shunt Regulator
