| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| LC321664BJ-80-TLM |
SANYO|SANYO |
N/a |
1000 |
 |
|
LC321664BT-70 ,1 MEG (65536 words X 16 bits) DRAM Fast Page Mode, Byte WriteOrdering number : EN5082AOve rviewThe LC321664BJ, BM, BT is a CMOS dynamic RAMoperating on a single ..
LC322260J-70 ,2 MEG (131072 words x 16 bits) DRAM fast page mode, byte reed/writePin assignment conforms to the JEDEC standards for4M DRAM (262144 words x 16 bits, 2C-AsnCrgtype). ..
LC322260J-80 ,2 MEG (131072 words x 16 bits) DRAM fast page mode, byte reed/writeAbsolute Maximum RatingsParameter Symbol Ratings Unit NoteMaximum supply voltage Vcc max -IOto +7.0 ..
LC322271M-80 ,2MEG (131072words x 16bit) DRAM fast page mode, byte writeElectrical Characteristics at Ta = 0 to +70°C, V = 5 V ± 10%CCLC322271J, M, TParameter Symbol Condi ..
LC32464M-80 ,256K (65536 words X 4 bits) DRAM Fast Page ModeFeatures. 65536 words K 4 bits configuration.. RAS access time/cycle time/power dissipation256 K (6 ..
LED55CF ,GAAS INFRARED EMITTIN DIODE
LEE-39 ,Circuits - Surface Mount Monolithic Amplifiers
