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L6917BDSTN/a21400avai5 BIT PROGRAMMABLE DUAL-PHASE CONTROLLER
L6917BDTRSTMN/a306avai5 BIT PROGRAMMABLE DUAL-PHASE CONTROLLER


L6917BD ,5 BIT PROGRAMMABLE DUAL-PHASE CONTROLLERL6917B5 BIT PROGRAMMABLE DUAL-PHASE CONTROLLER■ 2 PHASE OPERATION WITH SYNCRHONOUS RECTIFIER CONTRO ..
L6917BDTR ,5 BIT PROGRAMMABLE DUAL-PHASE CONTROLLERELECTRICAL CHARACTERISTICS V = 12V ±10%, T = 0 to 70°C unless otherwise specifiedCC JSymbol Paramet ..
L6919CD ,5 BIT PROGRAMMABLE DUAL-PHASE CONTROLLER WITH DYNAMIC VID MANAGEMENTBLOCK DIAGRAMO OS SC C / / IIN NH H SG SGND ND V VC CCD CDR RBO BOO O T T1 1HS HSU UP PGOO GOOD D G ..
L6919E ,5 BIT PROGRAMMABLE DUAL-PHASE CONTROLLER WITH DYNAMIC VID MANAGEMENTBLOCK DIAGRAMOS OSC C / / IIN NH H S SG GN N D D V VCCD CCD R RBO BO O O T T 1 1HS HSP PG GOOD OOD ..
L6919ETR ,5 BIT PROGRAMMABLE DUAL-PHASE CONTROLLER WITH DYNAMIC VID MANAGEMENTL6919E5 BIT PROGRAMMABLE DUAL-PHASE CONTROLLERWITH DYNAMIC VID MANAGEMENT■ 2 PHASE OPERATION WITH S ..
L6920 ,1V HIGH EFFICIENCY SYNCHRONOUS STEP UP CONVERTERApplicationsThe L6920 is a high efficiency step-up controller re-■ ONE TO THREE CELL BATTERY DEVICE ..
LC4128B-10TN100I , 3.3V/2.5V/1.8V In-System Programmable SuperFAST High Density PLDs
LC4128B-75T128C , 3.3V/2.5V/1.8V In-System Programmable SuperFAST High Density PLDs
LC4128B-75TN100C , 3.3V/2.5V/1.8V In-System Programmable SuperFAST High Density PLDs
LC4128C-75T100C , 3.3V/2.5V/1.8V In-System Programmable SuperFAST High Density PLDs
LC4128C-75T100C , 3.3V/2.5V/1.8V In-System Programmable SuperFAST High Density PLDs
LC4128C-75T100I , 3.3V/2.5V/1.8V In-System Programmable SuperFAST High Density PLDs


L6917BD-L6917BDTR
5 BIT PROGRAMMABLE DUAL-PHASE CONTROLLER
1/33
L6917B

September 2002 2 PHASE OPERATION WITH
SYNCRHONOUS RECTIFIER CONTROL ULTRA FAST LOAD TRANSIENT RESPONSE INTEGRATED HIGH CURRENT GATE
DRIVERS: UP TO 2A GATE CURRENT TTL-COMPATIBLE 5 BIT PROGRAMMABLE OUTPUT COMPLIANT WITH VRM 9.0 0.8% INTERNAL REFERENCE ACCURACY 10% ACTIVE CURRENT SHARING
ACCURACY DIGITAL 2048 STEP SOFT-START OVERVOLTAGE PROTECTION OVERCURRENT PROTECTION REALIZED
USING THE LOWER MOSFET'S RdsON OR A
SENSE RESISTOR 300 kHz INTERNAL OSCILLATOR OSCILLATOR EXTERNALLY ADJUSTABLE
UP TO 600kHz POWER GOOD OUTPUT AND INHIBIT
FUNCTION REMOTE SENSE BUFFER PACKAGE: SO-28
APPLICATIONS
POWER SUPPLY FOR SERVERS AND
WORKSTATIONS POWER SUPPLY FOR HIGH CURRENT
MICROPROCESSORS DISTRIBUTED DC-DC CONVERTERS
DESCRIPTION

The device is a power supply controller specifically
designed to provide a high performance DC/DC con-
version for high current microprocessors.
The device implements a dual-phase step-down con-
troller with a 180° phase-shift between each phase.
A precise 5-bit digital to analog converter (DAC) al-
lows adjusting the output voltage from 1.100V to
1.850V with 25mV binary steps.
The high precision internal reference assures the se-
lected output voltage to be within ±0.8%. The high
peak current gate drive affords to have fast switching
to the external power mos providing low switching
losses.
The device assures a fast protection against load
over current and load over/under voltage. An internal
crowbar is provided turning on the low side mosfet if
an over-voltage is detected. In case of over-current,
the system works in Constant Current mode.
5 BIT PROGRAMMABLE DUAL-PHASE CONTROLLER
BLOCK DIAGRAM
L6917B
2/33
ABSOLUTE MAXIMUM RATINGS
THERMAL DATA
PIN CONNECTION
3/33
L6917B
ELECTRICAL CHARACTERISTICS

VCC = 12V ±10%, TJ = 0 to 70°C unless otherwise specified
L6917B
4/33
ELECTRICAL CHARACTERISTICS (continued)

VCC = 12V ±10%, TJ = 0 to 70°C unless otherwise specified
5/33
L6917B
Table 1. VID Settings
L6917B
6/33
PIN FUNCTION

(*) Through a resistor Rg.
7/33
L6917B
PIN FUNCTION (continued)
L6917B
8/33
Device Description

The device is an integrated circuit realized in BCD technology. It provides complete control logic and protections
for a high performance dual-phase step-down DC-DC converter optimized for microprocessor power supply. It
is designed to drive N Channel MOSFETs in a dual-phase synchronous-rectified buck topology. A 180 deg
phase shift is provided between the two phases allowing reduction in the input capacitor current ripple, reducing
also the size and the losses. The output voltage of the converter can be precisely regulated, programming the
VID pins, from 1.100V to 1.850V with 25mV binary steps, with a maximum tolerance of ±0.8% over temperature
and line voltage variations. The device provides an average current-mode control with fast transient response.
It includes a 300kHz free-running oscillator adjustable up to 600kHz. The error amplifier features a 15V/μs slew
rate that permits high converter bandwidth for fast transient performances. Current information is read across
the lower mosfets rDSON or across a sense resistor in fully differential mode. The current information corrects
the PWM output in order to equalize the average current carried by each phase. Current sharing between the
two phases is then limited at ±10% over static and dynamic conditions. The device protects against over-cur-
rent, with an OC threshold for each phase, entering in constant current mode. Since the current is read across
the low side mosfets, the constant current keeps constant the bottom of the inductors current triangular wave-
form. When an under voltage is detected the device latches and the FAULT pin is driven high. The device per-
forms also over voltage protection that disable immediately the device turning ON the lower driver and driving
high the FAULT pin.
Oscillator

The device has been designed in order to operate an each phase at the same switching frequency of the internal
oscillator. So, input and output resulting frequency is doubled.
The switching frequency is internally fixed to 300kHz. The internal oscillator generates the triangular waveform
for the PWM charging and discharging with a constant current an internal capacitor. The current delivered to the
oscillator is typically 25μA and may be varied using an external resistor (ROSC) connected between OSC pin
and GND or Vcc. Since the OSC pin is maintained at fixed voltage (typ). 1.235V, the frequency is varied pro-
portionally to the current sunk (forced) from (into) the pin considering the internal gain of 12KHz/μA.
In particular connecting it to GND the frequency is increased (current is sunk from the pin), while connecting ROSC
to Vcc=12V the frequency is reduced (current is forced into the pin), according to the following relationships:
Note that forcing a 25μA current into this pin, the device stops switching because no current is delivered to the
oscillator.
Figure 1. ROSC vs. Switching Frequency
OSC vs. GND: fS 300kHz 1.237 OSC KΩ()--------------- --------------- 12 kHz-----------⋅+ 300kHz 14.82 106⋅ OSC KΩ()----- -------------------------+== OSC vs. 12V: fS 300kHz 12 1.237– OSC KΩ()------------------------------ 12 kHz-----------⋅– 300kHz 12.918 107⋅ OSC KΩ()--------- -----------------------–==
9/33
L6917B
Digital to Analog Converter

The built-in digital to analog converter allows the adjustment of the output voltage from 1.100V to 1.850V with
25mV as shown in the previous table 1. The internal reference is trimmed to ensure the precision of 0.8% and
a zero temperature coefficient around 70°C. The internal reference voltage for the regulation is programmed by
the voltage identification (VID) pins. These are TTL compatible inputs of an internal DAC that is realized by
means of a series of resistors providing a partition of the internal voltage reference. The VID code drives a mul-
tiplexer that selects a voltage on a precise point of the divider. The DAC output is delivered to an amplifier ob-
taining the VPROG voltage reference (i.e. the set-point of the error amplifier). Internal pull-ups are provided
(realized with a 5μA current generator up to 3.3V max); in this way, to program a logic "1" it is enough to leave
the pin floating, while to program a logic "0" it is enough to short the pin to GND. VID code “11111” programs
the NOCPU state: all mosfets are turned OFF and the condition is latched.
The voltage identification (VID) pin configuration also sets the power-good thresholds (PGOOD) and the over-
voltage protection (OVP) thresholds.
Soft Start and INHIBIT

At start-up a ramp is generated increasing the loop reference from 0V to the final value programmed by VID in
2048 clock periods as shown in figure 2.
Before soft start, the lower power MOS are turned ON after that VCCDR reaches 2V (independently by Vcc value)
to discharge the output capacitor and to protect the load from high side mosfet failures. Once soft start begins,
the reference is increased; when it reaches the bottom of the oscillator triangular waveform (1V typ) also the
upper MOS begins to switch and the output voltage starts to increase with closed loop regulation.. At the end of
the digital soft start, the Power Good comparator is enabled and the PGOOD signal is then driven high (See fig.
2). The Under Voltage comparator enabled when the reference voltage reaches 0.8V.
The Soft-Start will not take place, if both VCC and VCCDR pins are not above their own turn-on thresholds. Dur-
ing normal operation, if any under-voltage is detected on one of the two supplies the device shuts down.
Forcing the OSC/INH/FAULT pin to a voltage lower than 0.8V the device enter in INHIBIT mode: all the power
mosfets are turned off until this condition is removed. When this pin is freed, the OSC/INH/FAULT pin reaches
the band-gap voltage and the soft start begins.
Figure 2. Soft Start
L6917B
10/33
Driver Section

The integrated high-current drivers allow using different types of power MOS (also multiple MOS to reduce the
RDSON), maintaining fast switching transition.
The drivers for the high-side mosfets use BOOTx pins for supply and PHASEx pins for return. The drivers for
the low-side mosfets use VCCDRV pin for supply and PGND pin for return. A minimum voltage of 4.6V at VC-
CDRV pin is required to start operations of the device.
The controller embodies a sophisticated anti-shoot-through system to minimize low side body diode conduction
time maintaining good efficiency saving the use of Schottky diodes. The dead time is reduced to few nanosec-
onds assuring that high-side and low-side mosfets are never switched on simultaneously: when the high-side
mosfet turns off, the voltage on its source begins to fall; when the voltage reaches 2V, the low-side mosfet gate
drive is applied with 30ns delay. When the low-side mosfet turns off, the voltage at LGATEx pin is sensed. When
it drops below 1V, the high-side mosfet gate drive is applied with a delay of 30ns. If the current flowing in the
inductor is negative, the source of high-side mosfet will never drop. To allow the turning on of the low-side mos-
fet even in this case, a watchdog controller is enabled: if the source of the high-side mosfet don't drop for more
than 240ns, the low side mosfet is switched on so allowing the negative current of the inductor to recirculate.
This mechanism allows the system to regulate even if the current is negative.
The BOOTx and VCCDR pins are separated from IC's power supply (VCC pin) as well as signal ground (SGND
pin) and power ground (PGND pin) in order to maximize the switching noise immunity. The separated supply
for the different drivers gives high flexibility in mosfet choice, allowing the use of logic-level mosfet. Several com-
bination of supply can be chosen to optimize performance and efficiency of the application. Power conversion
is also flexible, 5V or 12V bus can be chosen freely.
The peak current is shown for both the upper and the lower driver of the two phases in figure 3. A 10nF capac-
itive load has been used. For the upper drivers, the source current is 1.9A while the sink current is 1.5A with
VBOOT-VPHASE = 12V; similarly, for the lower drivers, the source current is 2.4A while the sink current is 2A with
VCCDR = 12V.
Figure 3. Drivers peak current: High Side (left) and Low Side (right)
Current Reading and Over Current

The current flowing trough each phase is read using the voltage drop across the low side mosfets rDSON or
across a sense resistor (RSENSE) and internally converted into a current. The transconductance ratio is issued
by the external resistor Rg placed outside the chip between ISENx and PGNDSx pins toward the reading points.
The full differential current reading rejects noise and allows to place sensing element in different locations with-
out affecting the measurement's accuracy. The current reading circuitry reads the current during the time in
11/33
L6917B

which the low-side mosfet is on (OFF Time). During this time, the reaction keeps the pin ISENx and PGNDSx
at the same voltage while during the time in which the reading circuitry is off, an internal clamp keeps these two
pins at the same voltage sinking from the ISENx pin the necessary current.
The proprietary current reading circuit allows a very precise and high bandwidth reading for both positive and
negative current. This circuit reproduces the current flowing through the sensing element using a high speed
Track & Hold transconductance amplifier. In particular, it reads the current during the second half of the OFF
time reducing noise injection into the device due to the mosfet turn-on (See fig. 4). Track time must be at least
200ns to make proper reading of the delivered current.
Figure 4. Current Reading Timing (Left) and Circuit (Right)

This circuit sources a constant 50μA current from the PGNDSx pin and keeps the pins ISENx and PGNDSx at
the same voltage. Referring to figure 4, the current that flows in the ISENx pin is then given by the following
equation:
Where RSENSE is an external sense resistor or the rds,on of the low side mosfet and Rg is the transconductance
resistor used between ISENx and PGNDSx pins toward the reading points; IPHASE is the current carried by each
phase and, in particular, the current measured in the middle of the oscillator period
The current information reproduced internally is represented by the second term of the previous equation as
follow:
Since the current is read in differential mode, also negative current information is kept; this allow the device to
check for dangerous returning current between the two phases assuring the complete equalization between the
phase's currents.
From the current information of each phase, information about the total current delivered (IFB = IINFO1 + IINFO2)
and the average current for each phase (IAVG = (IINFO1 + IINFO2)/2 ) is taken. IINFOX is then compared to IAVG
to give the correction to the PWM output in order to equalize the current carried by the two phases.
The transconductance resistor Rg has to be designed in order to have current information of 25μA per phase
at full nominal load; the over current intervention threshold is set at 140% of the nominal (IINFOx = 35μA).
According to the above relationship, the limiting current (ILIM) for each phase, which has to be placed at one half
of the total delivered maximum current, results:
An over current is detected when the current flowing into the sense element is greater than 140% of the nominal ISENx 50μA R SENSEI PHASE⋅g
-------- ---------------- ----------------------+ 50μAI INFOx+== INFOx SENSEI PHASE⋅g
--------- --------------- ----------------------= LIM 35μARg⋅ SENSE --------------- ----------= Rg I LIM R SENSE⋅
35μA-------------- -----------------------=
L6917B
12/33
current (IINFOx>35μA): the device enters in Quasi-Constant-Current operation. The low-side mosfets stays ON
until IINFO becomes lower than 35μA skipping clock cycles. The high side mosfets can be turned ON with a TON
imposed by the control loop at the next available clock cycle and the device works in the usual way until another
OCP event is detected.
The device limits the bottom of the inductor current triangular waveform. So the average current delivered can
slightly increase also in Over Current condition since the current ripple increases. In fact, the ON time increases
due to the OFF time rise because of the current has to reach the 140% bottom. The worst-case condition is
when the duty cycle reaches its maximum value (d=75% internally limited). When this happens, the device
works in Constant Current and the output voltage decrease as the load increase. Crossing the UVP threshold
causes the device to latch (FAULT pin is driven high).
Figure 5 shows this working condition
Figure 5. Constant Current operation

It can be observed that the peak current (Ipeak) is greater than the 140% but it can be determined as follow:
Where INOM is the nominal current and VoutMIN is the minimum output voltage (VID-40% as explained below).
The device works in Constant-Current, and the output voltage decreases as the load increase, until the output
voltage reaches the under-voltage threshold (VoutMIN). When this threshold is crossed, all mosfets are turned
off, the FAULT pin is driven high and the device stops working. Cycle the power supply to restart operation.
The maximum average current during the Constant-Current behavior results:
In this particular situation, the switching frequency results reduced. The ON time is the maximum allowed (Ton-
MAX) while the OFF time depends on the application:
Over current is set anyway when IINFOx reaches 35μA. The full load value is only a convention to work with con-
venient values for IFB. Since the OCP intervention threshold is fixed, to modify the percentage with respect to
the load value, it can be simply considered that, for example, to have on OCP threshold of 170%, this will cor-
respond to IINFOx = 35μA (IFB = 70μA). The full load current will then correspond to IINFOx = 20.5μA (IFB = 41μA).
Ipeak 1.4I NOMIN Vout MIN–------------ --------------- ------------ Ton MAX⋅+⋅= MAX 1.4I NOM 2 Ipeak 1.4I NOM⋅–--------------- ---------------- ------------------⋅+⋅= OFF L Ipeak 1.4I NOM⋅–
Vout---------- --------------- ------------------------⋅=
13/33
L6917B
Integrated Droop Function

The device uses a droop function to satisfy the requirements of high performance microprocessors, reducing
the size and the cost of the output capacitor.
This method "recovers" part of the drop due to the output capacitor ESR in the load transient, introducing a de-
pendence of the output voltage on the load current
As shown in figure 6, the ESR drop is present in any case, but using the droop function the total deviation of the
output voltage is minimized. In practice the droop function introduces a static error (Vdroop in figure 6) propor-
tional to the output current. Since the device has an average current mode regulation, the information about the
total current delivered is used to implement the Droop Function. This current (equal to the sum of both IINFOx)
is sourced from the FB pin. Connecting a resistor between this pin and Vout, the total current information flows
only in this resistor because the compensation network between FB and COMP has always a capacitor in series
(See fig. 7). The voltage regulated is then equal to:
VOUT = VID - RFB · IFB
Since IFB depends on the current information about the two phases, the output characteristic vs. load current is
given by:
Figure 6. Output transient response without (a) and with (b) the droop function
Figure 7. Active Droop Function Circuit

The feedback current is equal to 50μA at nominal full load (IFB = IINFO1 + IINFO2) and 70μA at the OC threshold,
so the maximum output voltage deviation is equal to:
ΔVFULL_POSITIVE_LOAD = +RFB · 50μA ΔVPOSITIVE_OC_THRESHOLD = +RFB · 70μA
Droop function is provided only for positive load; if negative load is applied, and then IINFOx < 0, no current is
sunk from the FB pin. The device regulates at the voltage programmed by the VID. OUT VID RFB SENSE------- ---------------I OUT⋅⋅–=
L6917B
14/33
Output Voltage Protection and Power Good

The output voltage is monitored by pin VSEN. If it is not within +12/-10% (typ.) of the programmed value, the
powergood output is forced low. Power good is an open drain output and it is enabled only after the soft start is
finished (2048 clock cycles after start-up).
The device provides over voltage protection; when the voltage sensed by the VSEN pin reaches 2.1V (typ.), the
controller permanently switches on both the low-side mosfets and switches off both the high-side mosfets in or-
der to protect the CPU. The OSC/INH/FAULT pin is driven high (5V) and power supply (Vcc) turn off and on is
required to restart operations. The over Voltage percentage is set by the ratio between the OVP threshold (set
at 2.1V) and the reference programmed by VID.
Under voltage protection is also provided. If the output voltage drops below the 60% of the reference voltage for
more than one clock period the device turns off and the FAULT pin is driven high.
Both Over Voltage and Under Voltage are active also during soft start (Under Voltage after than Vout reaches
0.8V). During soft-start the reference voltage used to determine the OV and UV thresholds is the increasing volt-
age driven by the 2048 soft start digital counter.
Remote Voltage Sense

A remote sense buffer is integrated into the device to allow output voltage remote sense implementation without
any additional external components. In this way, the output voltage programmed is regulated between the re-
mote buffer inputs compensating motherboard trace losses or connector losses if the device is used for a VRM
module. The very low offset amplifier senses the output voltage remotely through the pins FBR and FBG (FBR
is for the regulated voltage sense while FBG is for the ground sense) and reports this voltage internally at VSEN
pin with unity gain eliminating the errors.
If remote sense is not required, the output voltage is sensed by the VSEN pin connecting it directly to the output
voltage. In this case the FBG and FBR pins must be connected anyway to the regulated voltage.
Input Capacitor

The input capacitor is designed considering mainly the input rms current that depends on the duty cycle as re-
ported in figure 8. Considering the dual-phase topology, the input rms current is highly reduced comparing with
a single phase operation.
Figure 8. Input rms Current vs. Duty Cycle (D) and Driving Relationships

It can be observed that the input rms value is one half of the single-phase equivalent input current in the worst
case condition that happens for D = 0.25 and D = 0.75.
OVP[%] 2.1V
Reference Voltage VID()------------------- --------------- --------------- --------------- ------------- 100⋅=
15/33
L6917B

The power dissipated by the input capacitance is then equal to:
Input capacitor is designed in order to sustain the ripple relative to the maximum load duty cycle. To reach the
high rms value needed by the CPU power supply application and also to minimize components cost, the input
capacitance is realized by more than one physical capacitor. The equivalent rms current is simply the sum of
the single capacitor's rms current.
Input bulk capacitor must be equally divided between high-side drain mosfets and placed as close as possible
to reduce switching noise above all during load transient. Ceramic capacitor can also introduce benefits in high
frequency noise decoupling, noise generated by parasitic components along power path.
Output Capacitor

Since the microprocessors require a current variation beyond 50A doing load transients, with a slope in the
range of tenth A/μs, the output capacitor is a basic component for the fast response of the power supply.
Dual phase topology reduces the amount of output capacitance needed because of faster load transient re-
sponse (switching frequency is doubled at the load connections). Current ripple cancellation due to the 180°
phase shift between the two phases also reduces requirements on the output ESR to sustain a specified voltage
ripple.
When a load transient is applied to the converter's output, for first few microseconds the current to the load is
supplied by the output capacitors. The controller recognizes immediately the load transient and increases the
duty cycle, but the current slope is limited by the inductor value.
The output voltage has a first drop due to the current variation inside the capacitor (neglecting the effect of the
ESL):
ΔVOUT = ΔIOUT · ESR
A minimum capacitor value is required to sustain the current during the load transient without discharge it. The
voltage drop due to the output capacitor discharge is given by the following equation:
Where DMAX is the maximum duty cycle value. The lower is the ESR, the lower is the output drop during load
transient and the lower is the output voltage static ripple.
Inductor design

The inductance value is defined by a compromise between the transient response time, the efficiency, the cost
and the size. The inductor has to be calculated to sustain the output and the input voltage variation to maintain
the ripple current ΔIL between 20% and 30% of the maximum output current. The inductance value can be cal-
culated with this relationship:
Where fSW is the switching frequency, VIN is the input voltage and VOUT is the output voltage.
Increasing the value of the inductance reduces the ripple current but, at the same time, reduces the converter
response time to a load transient. The response time is the time required by the inductor to change its current
from initial to final value. Since the inductor has not finished its charging time, the output current is supplied by
the output capacitors. Minimizing the response time can minimize the output capacitance required.
The response time to a load transient is different for the application or the removal of the load: if during the ap-
plication of the load the inductor is charged by a voltage equal to the difference between the input and the output RMS ESRI RMS()2⋅= OUTΔ I OUTΔ L⋅ OUT V INMIND MAX V OUT–⋅ ()⋅⋅---------------------------- --------------- --------------- --------------- --------------------= VIN V OUT– ILΔ⋅ ------------------------------V OUTIN
---------------⋅=
L6917B
16/33
voltage, during the removal it is discharged only by the output voltage. The following expressions give approx-
imate response time for ΔI load transient in case of enough fast compensation network response:
The worst condition depends on the input voltage available and the output voltage selected. Anyway the worst
case is the response time after removal of the load with the minimum output voltage programmed and the max-
imum input voltage available.
Figure 9. Inductor ripple current vs Vout
MAIN CONTROL LOOP

The L6917B control loop is composed by the Current Sharing control loop and the Average Current Mode con-
trol loop. Each loop gives, with a proper gain, the correction to the PWM in order to minimize the error in its
regulation: the Current Sharing control loop equalize the currents in the inductors while the Average Current
Mode control loop fixes the output voltage equal to the reference programmed by VID. Figure 10 reports the
block diagram of the main control loop.
Figure 10. Main Control Loop Diagram
application LIΔ⋅IN V OUT–- ---------------- -------------= t removal LIΔ⋅ OUT
---------------=
17/33
L6917B
Current Sharing (CS) Control Loop
Active current sharing is implemented using the information from Tran conductance differential amplifier in an
average current mode control scheme. A current reference equal to the average of the read current (IAVG) is
internally built; the error between the read current and this reference is converted to a voltage with a proper gain
and it is used to adjust the duty cycle whose dominant value is set by the error amplifier at COMP pin (See fig.
11).
The current sharing control is a high bandwidth control loop allowing current sharing even during load transients.
The current sharing error is affected by the choice of external components; choose precise Rg resistor (±1% is
necessary) to sense the current. The current sharing error is internally dominated by the voltage offset of Tran
conductance differential amplifier; considering a voltage offset equal to 2mV across the sense resistor, the cur-
rent reading error is given by the following equation:
Where ΔIREAD is the difference between one phase current and the ideal current (IMAX/2).
For Rsense = 4mΩ and Imax = 40A the current sharing error is equal to 2.5%, neglecting errors due to Rg and
Rsense mismatches.
Figure 11. Current Sharing Control Loop
Average Current Mode (ACM) Control Loop
The average current mode control loop is reported in figure 12. The current information IFB sourced by the FB
pin flows into RFB implementing the dependence of the output voltage from the read current.
The ACM control loop gain results (obtained opening the loop after the COMP pin):
Where: is the equivalent output resistance determined by the droop function;
–ZP(s) is the impedance resulting by the parallel of the output capacitor (and its ESR) and the applied
load Ro; READΔ MAX
----- --------------- 2mV SENSEI MAX⋅ ----------------------------------------= LOOPs() PWMZFs() R DROOP ZPs()+ ()⋅⋅Ps() ZLs()+ () ZFs()()--------------- 1 1()------------+  RFB⋅+⋅
------------ --------------- ---------------- --------------- --------------- --------------- --------------- -------------= DROOP senseg
------ ------------- RFB⋅=
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