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L6390DSTN/a20avaiSmartDRIVE HV Half Bridge driver with OP-AMP, smartSD, Comparator
L6390DTRSTN/a3605avaiSmartDRIVE HV Half Bridge driver with OP-AMP, smartSD, Comparator


L6390DTR ,SmartDRIVE HV Half Bridge driver with OP-AMP, smartSD, ComparatorElectrical characteristics . . . . . 85.1 AC operation . . . . . . . 85.2 DC operation ..
L6391DTR ,SmartDRIVE HV Half Bridge driver with smartSD and comparatorFeaturessingle-chip half-bridge gate driver for N-channel power MOSFET or IGBT.• High voltage rail ..
L6392D ,SmartDRIVE HV Half Bridge driver with OP-AMPFeatures■ High voltage rail up to 600 V■ dV/dt immunity ± 50 V/nsec in full temperature range■ Driv ..
L6392DTR ,SmartDRIVE HV Half Bridge driver with OP-AMPElectrical characteristics . . . . . 85.1 AC operation . . . . . . . 85.2 DC operation ..
L6393D ,SmartDRIVE HV Half Bridge driver with ComparatorFeatures ■ High voltage rail up to 600 V ■ dV/dt immunity ± 50 V/nsec in full temperature range ■ D ..
L640DU90NF , 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO™ Control
LC3564BS-10 ,64K (8192-word x8-bit) SRAM with NOT OE, NOT CE1, and CE2 Control PinsOrdering number : EN5804ACMOS ICLC3564B, BS, BM, BT-70/1064K (8192-word · 8-bit) SRAM with OE, CE1, ..
LC3564BS-70 ,64K (8192-word x 8-bit) SRAM with NOT OE, NOT CE1, and CE2 Control PinsOrdering number : EN5804ACMOS ICLC3564B, BS, BM, BT-70/1064K (8192-word · 8-bit) SRAM with OE, CE1, ..
LC3564BT-10 ,64K (8192-word x 8-bit) SRAM with NOT OE, NOT CE1, and CE2 Control PinsOrdering number : EN5804ACMOS ICLC3564B, BS, BM, BT-70/1064K (8192-word · 8-bit) SRAM with OE, CE1, ..
LC3564BT-70 ,64K (8192-word x 8-bit) SRAM with NOT OE, NOT CE1, and CE2 Control PinsOrdering number : EN5804ACMOS ICLC3564B, BS, BM, BT-70/1064K (8192-word · 8-bit) SRAM with OE, CE1, ..
LC3564CM-70U , 64K (8192-word x 8-bit) SRAM with OE, CE1, and CE2 Control Pins
LC3564S-10 ,64 K (8192 words x 8 bit) SRAMPin AssignmentsDIP28, SOP28NC 23 vs:A12 27 EA7 " ca:" tth AB" 24 "AA " Alf" ae FE" 21 A10Al 20 cann ..


L6390D-L6390DTR
SmartDRIVE HV Half Bridge driver with OP-AMP, smartSD, Comparator
June 2014 DocID14493 Rev 8 1/25
L6390

High voltage high/low-side driver
Datasheet - production data
Features
High voltage rail up to 600 V dV/dt immunity ± 50 V/nsec in full temperature
range Driver current capability:
290 mA source, 430 mA sink Switching times 75/35 nsec rise/fall with 1 nF
load 3.3 V, 5 V TTL/CMOS inputs with hysteresis Integrated bootstrap diode Operational amplifier for advanced current
sensing Comparator for fast fault protection Smart shutdown function Adjustable deadtime Interlocking function Compact and simplified layout Bill of material reduction
Applications
Home appliances Motor drivers DC, AC, PMDC and PMAC motors FOC and sensorless BEMF detection
systems Industrial applications and drives Induction heating HVAC Factory automation Power supply systems
Description

The L6390 is a full featured high voltage device
manufactured with the BCD™ “offline”
technology. It is a single-chip half-bridge gate
driver for N-channel power MOSFETs or IGBTs.
The high-side (floating) section is able to work
with voltage rail up to 600 V.
Both device outputs can sink and source 430 mA
and 290 mA respectively. Prevention from cross
conduction is ensured by interlocking and
programmable deadtime functions.
The device has dedicated input pins for each
output and a shutdown pin. The logic inputs are
CMOS/TTL compatible down to 3.3 V for easy
interfacing with control devices. Matched delays
between low-side and high-side sections
guarantee no cycle distortion and allow high
frequency operation.
The L6390 embeds an operational amplifier
suitable for advanced current sensing in
applications such as field oriented motor control
or for sensorless BEMF detection. A comparator
featuring advanced smartSD function is also
integrated in the device, ensuring fast and
effective protection against fault events like
overcurrent, overtemperature, etc.
The L6390 device features also UVLO protection
on both the lower and upper driving sections,
preventing the power switches from operating in
low efficiency or dangerous conditions.
The integrated bootstrap diode as well as all of
the integrated features of this IC make the
application PCB design easier, more compact and
simple thus reducing the overall bill of material.
The device is available in a DIP-16 tube and
SO-16 tube, and tape and reel packaging options.
Contents L6390
2/25 DocID14493 Rev 8
Contents Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Truth table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

4.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4.3 Recommended operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5.1 AC operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5.2 DC operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Waveforms definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Smart shutdown function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Typical application diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Bootstrap driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 BOOT selection and charging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
DocID14493 Rev 8 3/25
L6390 Block diagram
1 Block diagram
Figure 1. Block diagram
Pin connection L6390
4/25 DocID14493 Rev 8
2 Pin connection
Figure 2. Pin connection (top view)

Table 1. Pin description The circuit provides less than 1 V on the LVG and HVG pins (at Isink = 10 mA), with VCC > 3 V. This allows the omission of the “bleeder” resistor connected between the gate and the source of the external MOSFET normally used to hold the pin low; the gate driver assures low impedance also in SD condition.
DocID14493 Rev 8 5/25
L6390 Truth table
3 Truth table

Table 2. Truth table X: don't care.
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