| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| KST9014BL1I |
KESENES |
N/a |
3000 |
 |
|
KST92 ,PNP Epitaxial Silicon TransistorKST92/93KST92/933High Voltage Transistor2SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Si ..
KST92MTF ,PNP Epitaxial Silicon TransistorKST92/93KST92/933High Voltage Transistor2SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Si ..
KST92MTF ,PNP Epitaxial Silicon TransistorKST92/93KST92/933High Voltage Transistor2SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Si ..
KST92MTF ,PNP Epitaxial Silicon TransistorKST92/93KST92/933High Voltage Transistor2SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Si ..
KST92-MTF ,PNP Epitaxial Silicon TransistorKST92/93KST92/933High Voltage Transistor2SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Si ..
LA2650 ,Bass Boost ICFeatures unit: mm• The bass boost gain is variable over a maximum range 3021B-DIP20of 20 to 35 dB i ..
LA2650 ,Bass Boost ICElectrical CharacteristicsParameter Conditions D1 D2 D3 D4 D5 D6 D7 D8Quiescent currentI T Boost: o ..
LA2650 ,Bass Boost ICElectrical Characteristics at Ta = 25°C, V = 9 V, f = 1 kHz, R = 10 kΩ, BST = 35 dB, ADD = 0 dB, BS ..
