KST3904-MTF ,NPN Epitaxial Silicon TransistorKST3904KST39043General Purpose Transistor2SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial S ..
KST3904-MTF ,NPN Epitaxial Silicon TransistorKST3904KST39043General Purpose Transistor2SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial S ..
KST3904-MTF ,NPN Epitaxial Silicon TransistorKST3904KST39043General Purpose Transistor2SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial S ..
KST3906 ,PNP Epitaxial Silicon TransistorKST3906KST39063General Purpose Transistor2SOT-231PNP Epitaxial Silicon Transistor1. Base 2. Emitt ..
KST3906 ,PNP Epitaxial Silicon TransistorKST3906KST39063General Purpose Transistor2SOT-231PNP Epitaxial Silicon Transistor1. Base 2. Emitt ..
KST3906 ,PNP Epitaxial Silicon TransistorKST3906KST39063General Purpose Transistor2SOT-231PNP Epitaxial Silicon Transistor1. Base 2. Emitt ..
LA1844M , For Home Stereo Single-chip Tuner IC
LA1845N ,Single-Chip Home Stereo ICOrdering number : ENN7185Monolithic linear ICLA1845N, 1845NMSingle-Chip Home Stereo ICOverview Pack ..
LA1845N ,Single-Chip Home Stereo ICFeatures• Integrated MPX VCO (ceramic resonators are no longer24 13required.)• Built-in adjacent ch ..
LA1845N ,Single-Chip Home Stereo ICOperating Characteristics at Ta = 25°C, V = 8 V, in the specified test circuit.CCRatingsParameter S ..
LA1845NV ,FM/AM HF Amplifiers: Home stereo system tuner IC with electronic tuningFeatures • Integrated MPX VCO (ceramic resonators are no longer required.) • Built-in adjacent chan ..
LA1851N ,DTS Single-chip Tuner ICOrdering number: EN3231CMonolithic Linear IC_ LA1851 NNo. 32310DTS Single-chip Tuner ICOverview Pac ..
KST3904MTF-KST3904-MTF
NPN Epitaxial Silicon Transistor
KST3904 KST3904 3 General Purpose Transistor 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current 200 mA C P Collector Power Dissipation 350 mW C T Storage Temperature 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Base Breakdown Voltage I =10μA, I =0 60 V CBO C E BV * Collector-Emitter Breakdown Voltage I =1mA, I =0 40 V CEO C B BV Emitter-Base Breakdown Voltage I =10μA, I =0 6 V EBO E C I Collector Cut-off Current V =30V, V =3V 50 nA CEX CE EB h * DC Current Gain V =1V, I =0.1mA 40 FE CE C V =1V, I =1mA 70 CE C V =1V, I =10mA 100 300 CE C V =1V, I =50mA 60 CE C V =1V, I =100mA 30 CE C V (sat) * Collector-Emitter Saturation Voltage I =10mA, I =1mA 0.2 V CE C B I =50mA, I =5mA 0.3 V C B V (sat) * Base-Emitter Saturation Voltage I =10mA, I =1mA 0.65 0.85 V BE C B I =50mA, I =5mA 0.95 V C B C Output Capacitance V =5V, I =0, f=1MHz 4 pF ob CB E f Current Gain-Bandwidth Product V =20V, I =10mA, f=100MHz 300 MHz T CE C NF Noise Figure I =100μA, V =5V, R =1KΩ 5dB C CE S f=10Hz to 15.7KHz t Turn On Time V =3V, V =0.5V 70 ns ON CC BE I =10mA, I =1mA C B1 Turn Off Time V =3V, I =10mA, 250 ns CC C t I =I =1mA OFF B1 B2 * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% Marking 1A ©2002 Rev. A1, November 2002
