KSR2210 ,PNP Epitaxial Silicon TransistorKSR2210KSR2210Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
KSS04S , DIP Switch
KST05 ,NPN Epitaxial Silicon TransistorKST05/06KST05/06Driver Transistor• Collector-Emitter Voltage: V = KST05: 60V CEO 3KST06: 80V• Coll ..
KST06 ,NPN Epitaxial Silicon TransistorKST05/06KST05/06Driver Transistor• Collector-Emitter Voltage: V = KST05: 60V CEO 3KST06: 80V• Coll ..
KST06MTF ,NPN Epitaxial Silicon TransistorKST05/06KST05/06Driver Transistor• Collector-Emitter Voltage: V = KST05: 60V CEO 3KST06: 80V• Coll ..
KST06-MTF ,NPN Epitaxial Silicon TransistorKST05/06KST05/06Driver Transistor• Collector-Emitter Voltage: V = KST05: 60V CEO 3KST06: 80V• Coll ..
LA1816 ,Single-Chip AM/FM, MPX Tuner System for Headphone Stereos, Radio-Cassette RecordersOperating Characteristics at Ta = 25°C , V = 3 V, See specified Test CircuitCCParameter Symbol Cond ..
LA1816M ,Single-Chip AM/FM, MPX Tuner System for Headphone Stereos, Radio-Cassette RecordersFeatures.Contains FM tuner,AM tuner, MPX on a single chip..Adjustment-free FM detector andAM IF.Min ..
LA1823 ,Single-Chip Tuner IC for Use in Radio Cassette RecorderOperating Characteristics at Ta = 25 OC, VCC =. 4.5 V, in the specified test circuit usingthe IC59- ..
LA1823M , Single-Chip Tuner ICs for Use in Radio Cassette Recorder
LA1824 ,Single Chip Tuner IC for Use in Radio/Cassette Products with Manual TuningOperating Characteristics at Ta = 25 °C, V = 4.5 V, in the specified test usingCC the IC179-2 socke ..
LA1826 ,AM/FM Tuner with MPX Stereo DemodulatorBLOCK DIAGRAMFM antennaC,NU orFM uéuMalorI HF $9” T _ -- "= . " T _, v-SM . High! Lell_ .--o -HF--- ..
KSR2210
PNP Epitaxial Silicon Transistor
KSR2210 KSR2210 Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=10KΩ) • Complement to KSR1210 TO-92S 1 1.Emitter 2. Collector 3. Base Equivalent Circuit C R B PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -40 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -100 mA C P Collector Power Dissipation 300 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -100μA, I =0 -40 V CBO C E BV Collector-Emitter Breakdown Voltage I = -1mA, I =0 -40 V CEO E B I Collector Cut-off Current V = -30V, I =0 -0.1 μA CBO CB E h DC Current Gain V = -5V, I = -1mA 100 600 FE CE C V (sat) Collector-Emitter Saturation Voltage I = -10mA, I = -1mA -0.3 V CE C B C Output Capacitance V = -10V, I =0 5.5 pF ob CB E f=1MHz f Current Gain Bandwidth Product V = -10V, I = -5mA 200 MHz T CE C R Input Resistor 7 10 13 KΩ ©2001 Rev. A1, July 2001
