KSR2113-MTF ,PNP Epitaxial Silicon TransistorKSR2113KSR2113Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
KSR2114 , PNP (SWITCHING APPLICATION)
KSR2202 , PNP (SWITCHING APPLICATION)
KSR2202 , PNP (SWITCHING APPLICATION)
KSR2202 , PNP (SWITCHING APPLICATION)
KSR2203 ,PNP Epitaxial Silicon TransistorKSR2203KSR2203Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
LA1806 ,AM/FM-IF/MPX Tuner System for Radio-Cassette Recorders, Music Centerspin assignment and package as those of3067-DIP24Sthe LA1811. Improvements are made on the following ..
LA1810 ,AM/FM/MPX Tuner System for Radio-Cassette Recorders, Music CentersFeatures. PM/AM/MPX functions contained on a singlechip.' Munimum number of external parts required ..
LA1816 ,Single-Chip AM/FM, MPX Tuner System for Headphone Stereos, Radio-Cassette RecordersOperating Characteristics at Ta = 25°C , V = 3 V, See specified Test CircuitCCParameter Symbol Cond ..
LA1816M ,Single-Chip AM/FM, MPX Tuner System for Headphone Stereos, Radio-Cassette RecordersFeatures.Contains FM tuner,AM tuner, MPX on a single chip..Adjustment-free FM detector andAM IF.Min ..
LA1823 ,Single-Chip Tuner IC for Use in Radio Cassette RecorderOperating Characteristics at Ta = 25 OC, VCC =. 4.5 V, in the specified test circuit usingthe IC59- ..
LA1823M , Single-Chip Tuner ICs for Use in Radio Cassette Recorder
KSR2113-MTF
PNP Epitaxial Silicon Transistor
KSR2113 KSR2113 Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit 3 • Built in bias Resistor (R =2.2KΩ, R =47KΩ) 1 2 • Complement to KSR1113 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R1 B R63 R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage -50 V CBO V Collector-Emitter Voltage -50 V CEO V Emitter-Base Voltage -10 V EBO I Collector Current -100 mA C P Collector Power Dissipation 200 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -10μA, I =0 -50 V CBO C E BV Collector-Emitter Breakdown Voltage I = -100μA, I =0 -50 V CEO C B I Collector Cutoff Current V = -40V, I =0 -0.1 μA CBO CB E h DC Current Gain V = -5V, I = -5mA 68 FE CE C V (sat) Collector-Emitter Saturation Voltage I = -10mA, I = -0.5mA -0.3 V CE C B f Current Gain Bandwidth Product V = -10V I =-5mA 200 MHz T CE C C Output Capacitance V = -10V, I =0 5.5 pF ob CB E f=1.0MHz V (off) Input Off Voltage V = -5V, I = -100μA-0.5 V I CE C V (on) Input On Voltage V = -0.2V, I = -10mA -1.1 V I CE C R Input Resistor 1.5 2.2 2.9 KΩ 1 R /R Resistor Ratio 0.042 0.047 0.052 1 2 ©2002 Rev. A3, November 2002
