KSR2104MTF ,PNP Epitaxial Silicon TransistorKSR2104KSR2104Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
KSR2113 ,PNP (SWITCHING APPLICATION)
KSR2113-MTF ,PNP Epitaxial Silicon TransistorKSR2113KSR2113Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
KSR2114 , PNP (SWITCHING APPLICATION)
KSR2202 , PNP (SWITCHING APPLICATION)
KSR2202 , PNP (SWITCHING APPLICATION)
LA1800 ,FM/AM Single-Chip RadioOrdering number : EN1844CMonolithic Linear ICLA1800FM/AM Single-Chip RadioFunctionsPackage Dimensio ..
LA1805 ,AM/FM-IF/MPX Tuner System for Radio-Casette Recorders, Music Centerspin assignment and package as3067-DIP24Sthose of the LA1810. Improvements are made on thefollowing ..
LA1806 ,AM/FM-IF/MPX Tuner System for Radio-Cassette Recorders, Music Centerspin assignment and package as those of3067-DIP24Sthe LA1811. Improvements are made on the following ..
LA1810 ,AM/FM/MPX Tuner System for Radio-Cassette Recorders, Music CentersFeatures. PM/AM/MPX functions contained on a singlechip.' Munimum number of external parts required ..
LA1816 ,Single-Chip AM/FM, MPX Tuner System for Headphone Stereos, Radio-Cassette RecordersOperating Characteristics at Ta = 25°C , V = 3 V, See specified Test CircuitCCParameter Symbol Cond ..
LA1816M ,Single-Chip AM/FM, MPX Tuner System for Headphone Stereos, Radio-Cassette RecordersFeatures.Contains FM tuner,AM tuner, MPX on a single chip..Adjustment-free FM detector andAM IF.Min ..
KSR2104MTF
PNP Epitaxial Silicon Transistor
KSR2104 KSR2104 Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit 3 • Built in bias Resistor (R =47KΩ, R =47KΩ) 1 2 • Complement to KSR1104 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R1 B R54 R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage -50 V CBO V Collector-Emitter Voltage -50 V CEO V Emitter-Base Voltage -10 V EBO I Collector Current -100 mA C P Collector Power Dissipation 200 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -10μA, I =0 -50 V CBO C E BV Collector-Emitter Breakdown Voltage I = -100μA, I =0 -50 V CEO C B I Collector Cutoff Current V = -40V, I =0 -0.1 μA CBO CB E h DC Current Gain V = -5V, I = -5mA 68 FE CE C V (sat) Collector-Emitter Saturation Voltage I = -10mA, I = -0.5mA -0.3 V CE C B f Current Gain Bandwidth Product V = -10V, I = -5mA 200 MHz T CE C C Output Capacitance V = -10V, I =0 5.5 pF ob CB E f=1.0MHz V (off) Input Off Voltage V = -5V, I = -100μA-0.5 V I CE C V (on) Input On Voltage V = -0.3V, I = -2mA -3 V I CE C R Input Resistor 32 47 62 KΩ 1 R /R Resistor Ratio 0.9 1 1.1 1 2 ©2002 Rev. A3, November 2002
