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KSR1103MTFFAIRCHILDN/a168000avaiNPN Epitaxial Silicon Transistor
KSR1103-MTF |KSR1103MTFFAIRCHILDN/a18000avaiNPN Epitaxial Silicon Transistor


KSR1103MTF ,NPN Epitaxial Silicon TransistorKSR1103KSR1103Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
KSR1103-MTF ,NPN Epitaxial Silicon TransistorKSR1103KSR1103Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
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KSR1104 ,NPN Epitaxial Silicon TransistorKSR1104KSR1104Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
KSR1104 ,NPN Epitaxial Silicon TransistorKSR1104KSR1104Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
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LA1266 ,AM/FM Tuner System Of Electronic Tuning TypeOrdering number : EN2291BMonolithic Linear ICLA1266AM/FM Tuner System OfElectronic Tuning TypeFunct ..
LA1267 ,FM/AM Tuner of Electronic Tuning TypeOperating Characteristics at Ta=25°C, V =8.5V, See specified Test Circuit CCRatingsParameter Symbol ..
LA1357N ,MONOLITHIC LINEAR ICVIDEO F SYSTEMFunctionsI Video IF amplifierI RF AGCI Video detectorI AFT
LA1362 ,MONOLITHIC LINEAR ICFeaturesI Stable operation due to built-in Zener diodeI Low distortionI Small-sized packageCL,A'l 3 ..
LA1363 ,MONOLITHIC LINEAR ICFeaturesI High gain, high S/N.I Peak AGC/keyed AGC available.I Usable of surface acoustic wave filt ..
LA1365 ,MONOLITHIC LINEAR ICFeaturesI Capable of direct driving of output stage.I Superior AM rejection ratio..himonolithic: li ..


KSR1103MTF-KSR1103-MTF
NPN Epitaxial Silicon Transistor
KSR1103 KSR1103 Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit 3 • Built in bias Resistor (R =22KΩ, R =22KΩ) 1 2 • Complement to KSR2103 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R1 B R03 R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 50 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 10 V EBO I Collector Current 100 mA C P Collector Power Dissipation 200 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =10μA, I =0 50 V CBO C E BV Collector-Emitter Breakdown Voltage I =100μA, I =0 50 V CEO C B I Collector Cut-off Current V =40V, I =0 0.1 μA CBO CB E h DC Current Gain V =5V, I =5mA 56 FE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =0.5mA 0.3 V CE C B f Current Gain Bandwidth Product V =10V, I =5mA 250 MHz T CE C C Output Capacitance V =10V, I =0 3.7 pF ob CB E f=1.0MHz V (off) Input Off Voltage V =5V, I =100μA0.5 V I CE C V (on) Input On Voltage V =0.3V, I =5mA 3.0 V I CE C R Input Resistor 15 22 29 KΩ 1 R /R Resistor Ratio 0.9 1 1.1 1 2 ©2002 Rev. A2, October 2002
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